Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

Girard, Aurélie; Coulon, Nathalie; Cardinaud, Christophe; Mohammed‐Brahim, Tayeb; Geneste, Florence

doi:10.1016/j.apsusc.2014.07.012

Cited by 7 publications

(5 citation statements)

References 43 publications

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“…It is evident from the results that irrespective of the type of substrate, thick aminophenyl layers can be obtained using Fe powder reducing agent in the solution of para ‐phenylenediamine and sodium nitrite for a reaction time of 180 min, and the layer thickness is similar (60–68 Å) for the three representative substrates used in this experiment (Si, TiN, and Cu). The p‐doped single crystal Si surface with (100) orientation has been found to be the least reactive surface among various Si‐based substrates (N‐doped, polycrystalline Si,…) toward reducing diazonium cations from solution . Moreover in our case, the native oxide was not removed off Si, which makes the Si surface insulating.…”

Section: Methodsmentioning

confidence: 63%

An Application of Diazonium‐Induced Anchoring Process in the Fabrication of Micro‐Electromechanical Systems

Zeb

Zafar

2017

Adv Materials Technologies

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International audienceIn situ generation of diazonium cations and their subsequent reduction and grafting is a versatile technique to modify a variety of substrates. In the absence of a conducting substrate, the grafting of aminophenylene layer can be achieved with assistance of a reducing agent (diazonium-induced anchoring process—DIAP). Here, a systematic investigation of the possible effect of the type substrate on the thickness of aminophenyl layer is carried out using Fe powder reducing agent. The study is carried out on three different substrates: p-doped Si, TiN, and Cu films and concludes that the film-growth mechanism is independent of the type of substrate. This work is particularly important for many industrial applications, which require unifying a single film deposition process for multiple structural materials. The first results obtained with mechanical Si test structures clearly show that surface amination at room temperature, in open air, and aqueous medium using DIAP can be easily integrated into the fabrication of microelectromechanical systems and, therefore, can potentially replace the currently industrialized organic-based silanization process

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Section: Methodsmentioning

confidence: 63%

An Application of Diazonium‐Induced Anchoring Process in the Fabrication of Micro‐Electromechanical Systems

Zeb

Zafar

2017

Adv Materials Technologies

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“…In recent years, there have been many studies on modified films on silicon wafers. − Copper is also a commonly used metal in the electronics industry, so it is not only limited to the preparation of high-performance insulating films on the silicon surface but also of great significance to preparing insulating films on copper. Studies have shown that the addition of POSS to the polymer can make the material have high thermal stability, mechanical toughness, and oxidation resistance.…”

Section: Resultsmentioning

confidence: 99%

Covalent Grafting of Dielectric Films on Cu(111) Surface via Electrochemical Reduction of Aryl Diazonium Salts

Cao

Hang

et al. 2022

Langmuir

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Covalent grafting of dielectric films containing polyhedral oligomeric silsesquioxane (POSS) on the surface of Cu(111) is performed by a one-step electrochemical reduction of diazonium salts. This method is efficient and economic and performs in a proton-polar solvent of deionized water and tetrahydrofuran (THF), where the monomer employs an octavinylsilsesquioxane (OVS) containing a POSS core. The eight vinyl bonds contained in OVS are used to participate in aryl radical-initiated polymerization reactions to form films. The formed film is dense and covers the copper surface completely and uniformly. The thickness of the film can be controlled by adjusting the reaction time. The components of the films are mainly polynitrophenyl (PNP) or polyaminophenyl (PAP) as well as poly(octavinylsilsesquioxane) (POVS), and the POVS content could be adjusted by the applied voltage. The introduction of POSS prevents the copper surface from being oxidized and often gives the film good properties such as good dielectric properties, mechanical properties, and thermal properties. In addition, the presence of Cu–O–C and Cu–C bonds between the film and copper interface is confirmed at different film thicknesses by X-ray photoelectron spectroscopy (XPS), which allowed the construction of covalent bonds between metal and nonmetal, further enhancing the bonding between the film and copper. Organic films prepared by electrochemical reduction of diazonium salts using OVS as a monomer will have potential significance for the future development of the electronics industry.

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“…Since control experiments showed no reaction between any of the organochalcogenide reagents tested in absence of the BBD initiator under these conditions, consideration of the mechanism starts with the reactivity of BBD with porous silicon, as shown in Figure a. As an electrophilic diazonium reagent, BBD is reduced by the silicon, leading to decomposition and formation of a bromoaryl radical and release of N 2 . , The resulting positive charge on the silicon surface may be neutralized via release of HBF 4 and formation of a surface Si radical. , Since the starting point of the reaction appears to be a surface-bound Si• group, the molecular chemistry of organochalcogenides with silyl radicals should lead to mechanistic insights. Molecules containing S- − and Se- − based substituents are well-established players in radical chemistry, including the molecular chemistry of silyl radicals. ,, A summary of representative radical reactions used to buttress the proposed surface-based mechanisms is shown in Table .…”

Section: Discussionmentioning

confidence: 99%

“…66,68 The resulting positive charge on the silicon surface may be neutralized via release of HBF 4 and formation of a surface Si radical. 66,74 Since the starting point of the reaction appears to be a surface-bound Si• group, the molecular chemistry of organochalcogenides with silyl radicals should lead to mechanistic insights. Molecules containing S-75−77 and Se-78−80 based substituents are well-established players in radical chemistry, including the molecular chemistry of silyl radicals.…”

Section: ■ Discussionmentioning

confidence: 99%

From Molecules to Surfaces: Radical-Based Mechanisms of Si–S and Si–Se Bond Formation on Silicon

Buriak

Sikder

2015

J. Am. Chem. Soc.

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The derivatization of silicon surfaces can have profound effects on the underlying electronic properties of the semiconductor. In this work, we investigate the radical surface chemistry of silicon with a range of organochalcogenide reagents (comprising S and Se) on a hydride-terminated silicon surface, to cleanly and efficiently produce surface Si-S and Si-Se bonds, at ambient temperature. Using a diazonium-based radical initiator, which induces formation of surface silicon radicals, a group of organochalcogenides were screened for reactivity at room temperature, including di-n-butyl disulfide, diphenyl disulfide, diphenyl diselenide, di-n-butyl sulfide, diphenyl selenide, diphenyl sulfide, 1-octadecanethiol, t-butyl disulfide, and t-butylthiol, which comprises the disulfide, diselenide, thiol, and thioether functionalities. The surface reactions were monitored by transmission mode Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ionization mass spectrometry. Calculation of Si-Hx consumption, a semiquantitative measure of yield of production of surface-bound Si-E bonds (E = S, Se), was carried out via FTIR spectroscopy. Control experiments, sans the BBD diazonium radical initiator, were all negative for any evident incorporation, as determined by FTIR spectroscopy. The functional groups that did react with surface silicon radicals included the dialkyl/diphenyl disulfides, diphenyl diselenide, and 1-octadecanethiol, but not t-butylthiol, diphenyl sulfide/selenide, and di-n-butyl sulfide. Through a comparison with the rich body of literature regarding molecular radicals, and in particular, silyl radicals, reaction mechanisms were proposed for each. Armed with an understanding of the reaction mechanisms, much of the known chemistry within the extensive body of radical-based reactivity has the potential to be harnessed on silicon and could be extended to a range of technologically relevant semiconductor surfaces, such as germanium, carbon, and others.

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Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

Cited by 7 publications

References 43 publications

An Application of Diazonium‐Induced Anchoring Process in the Fabrication of Micro‐Electromechanical Systems

An Application of Diazonium‐Induced Anchoring Process in the Fabrication of Micro‐Electromechanical Systems

Covalent Grafting of Dielectric Films on Cu(111) Surface via Electrochemical Reduction of Aryl Diazonium Salts

From Molecules to Surfaces: Radical-Based Mechanisms of Si–S and Si–Se Bond Formation on Silicon

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