Effect of Electric Fields on Silicon-Based Monolayers

Li, Tiexin; Peiris, Chandramalika R.; Dief, Essam M.; MacGregor, Melanie; Ciampi, Simone; Darwish, Nadim

doi:10.1021/acs.langmuir.2c00015

Cited by 7 publications

(12 citation statements)

References 56 publications

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“…5 mg) of ammonium sulfite was added to scavenge oxygen. This process leads to a hydrogen-terminated Si surface [Si(111)–H]. − The etched samples were rinsed sequentially with Milli-Q water and dichloromethane and were then blown dry in a stream of argon before analysis.…”

Section: Methodsmentioning

confidence: 99%

Memristor Arrays Formed by Reversible Formation and Breakdown of Nanoscale Silica Layers on Si–H Surfaces

Peiris

Ferrie

Ciampi

et al. 2022

ACS Appl. Nano Mater.

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Nonvolatile resistive switching, also known as the memristor effect, has emerged as an important concept in the development of neuromorphic computing. Memristive operation shares similarities to the mechanism of biological synapses, making it a promising technology for future artificial intelligence. To date, most memristor platforms are based on the resistive switching of an insulating material separating two metals. For future electrical circuitry that resembles those of synapses and neurons, memristors are likely to be integrated with materials already used in the microelectronics industry such as silicon. Here, we demonstrate a silicon-based memristor array based on creating nanoscale silicon oxide layers on silicon hydride surfaces, followed by a localized and reversible breakdown of the silicon oxide to form conducting channels. The size of an individual memristor is 30 nm, with a conductance ON/OFF ratio greater than 104 at room temperature. This work opens a new platform for realizing neuromorphic systems directly on silicon.

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Section: Methodsmentioning

confidence: 99%

Memristor Arrays Formed by Reversible Formation and Breakdown of Nanoscale Silica Layers on Si–H Surfaces

Peiris

Ferrie

Ciampi

et al. 2022

ACS Appl. Nano Mater.

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“…Important to consider is the possible irreversible negative effect an electric field may have on the biomolecular layer and its functionality. Li et al [ 130 ] studied the effect of an applied electric field on self-assembled monolayer of organic molecules on oxide-free silicon surfaces. They reported that typical monolayers on hydrogen-terminated silicon undergo partial desorption followed by the oxidation of the underneath silicon at +1.5 V vs Ag/AgCl.…”

Section: Current Trends In Biosensors Assisted By Dielectrophoresismentioning

confidence: 99%

“…It was shown that typical monolayers on hydrogen-terminated silicon undergo partial desorption followed by the oxidation of the underneath silicon at +1.5 V vs. Ag/AgCl. Furthermore, the monolayer lost 28% of its surface coverage and 55% of its electron transfer rate after 10 min [ 130 ]. Detaching of receptor molecules as well as conformational changes of receptors or analytes could be important limitations.…”

Section: Perspectives and Challengesmentioning

confidence: 99%

Dielectrophoresis: An Approach to Increase Sensitivity, Reduce Response Time and to Suppress Nonspecific Binding in Biosensors?

2022

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The performance of receptor-based biosensors is often limited by either diffusion of the analyte causing unreasonable long assay times or a lack of specificity limiting the sensitivity due to the noise of nonspecific binding. Alternating current (AC) electrokinetics and its effect on biosensing is an increasing field of research dedicated to address this issue and can improve mass transfer of the analyte by electrothermal effects, electroosmosis, or dielectrophoresis (DEP). Accordingly, several works have shown improved sensitivity and lowered assay times by order of magnitude thanks to the improved mass transfer with these techniques. To realize high sensitivity in real samples with realistic sample matrix avoiding nonspecific binding is critical and the improved mass transfer should ideally be specific to the target analyte. In this paper we cover recent approaches to combine biosensors with DEP, which is the AC kinetic approach with the highest selectivity. We conclude that while associated with many challenges, for several applications the approach could be beneficial, especially if more work is dedicated to minimizing nonspecific bindings, for which DEP offers interesting perspectives.

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“…These sites are reactive toward oxygen and water and initiate an oxidation of the silicon surface. 39 The oxide layer grows on the surface of the silicon atoms and in between the Si atoms of the surface, changes Si−Si bond angles, breaks bonds, and extends inside the bulk Si structure. The mechanism of oxidation of Si surfaces is a subject of continuous debate.…”

Section: Introductionmentioning

confidence: 99%

Terminal Deuterium Atoms Protect Silicon from Oxidation

Li,

Peiris,

Aragonès

et al. 2023

ACS Appl. Mater. Interfaces

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In recent years, the hybrid silicon-molecular electronics technology has been gaining significant attention for applications in sensors, photovoltaics, power generation, and molecular electronics devices. However, Si–H surfaces, which are the platforms on which these devices are formed, are prone to oxidation, compromising the mechanical and electronic stability of the devices. Here, we show that when hydrogen is replaced by deuterium, the Si–D surface becomes significantly more resistant to oxidation when either positive or negative voltages are applied to the Si surface. Si–D surfaces are more resistant to oxidation, and their current–voltage characteristics are more stable than those measured on Si–H surfaces. At positive voltages, the Si–D stability appears to be related to the flat band potential of Si–D being more positive compared to Si–H surfaces, making Si–D surfaces less attractive to oxidizing OH– ions. The limited oxidation of Si–D surfaces at negative potentials is interpreted by the frequencies of the Si–D bending modes being coupled to that of the bulk Si surface phonon modes, which would make the duration of the Si–D excited vibrational state significantly less than that of Si–H. The strong surface isotope effect has implications in the design of silicon-based sensing, molecular electronics, and power-generation devices and the interpretation of charge transfer across them.

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Effect of Electric Fields on Silicon-Based Monolayers

Cited by 7 publications

References 56 publications

Memristor Arrays Formed by Reversible Formation and Breakdown of Nanoscale Silica Layers on Si–H Surfaces

Memristor Arrays Formed by Reversible Formation and Breakdown of Nanoscale Silica Layers on Si–H Surfaces

Dielectrophoresis: An Approach to Increase Sensitivity, Reduce Response Time and to Suppress Nonspecific Binding in Biosensors?

Terminal Deuterium Atoms Protect Silicon from Oxidation

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