Effect of erbium interlayer on nickel silicide formation on Si(100)

Huang, Wei; Min, Ye; Ru, Guo-Ping; Jiang, Yu-Long; Qu, Xin-Ping; Li, B.Z.

doi:10.1016/j.apsusc.2007.08.081

Cited by 10 publications

(8 citation statements)

References 14 publications

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“…7. The high values of the sheet resistance for the samples annealed at temperatures of 300°C and 400°C may result from the formation of Co 2 Si and Ni 2 Si phases [26]. For higher temperatures, we can see that the sheet resistance decreases and stabilizes around 4 Ω/square.…”

Section: Resultsmentioning

confidence: 80%

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Sedrati

Bouabellou

Kabir

et al. 2020

Materials Science-Poland

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In this work, the Ni/Co/Si system was annealed at temperatures ranging from 300 °C to 800 °C. The samples were characterized by means of X-ray diffraction (XRD), Raman spectroscopy, Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and sheet resistance measurement. The XRD and Raman spectroscopy results showed that the formation of nickel and cobalt silicides (CoSi, Co2Si, Ni2Si, NiSi, NiSi2, CoSi2) is an annealing temperature dependent diffusion process. The diffusion phenomenon was evidenced by RBS. The low values of the sheet resistance which were correlated with the films surface roughness were attributed to the formation of both CoSi and NiSi phases.

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Section: Resultsmentioning

confidence: 80%

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Sedrati

Bouabellou

Kabir

et al. 2020

Materials Science-Poland

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“…According to the XRD analysis, the (Co x Ni 1-x )Si 2 ternary silicide is the main phase in the system at temperatures ranging between 500 and 800°C. The Ni/Si samples exhibit a sharp rise in sheet resistance for temperatures higher than 700°C due to the formation of the NiSi 2 disilicide [23]; Co/Ni/Si samples, however, did not show a noticeable rise in resistance around 700°C, which is a great improvement over the Ni/Si system. Figure 3 shows the RBS spectra of the Co/Ni/Si(100) samples annealed at different temperatures.…”

Section: A C C E P T E D Accepted Manuscriptmentioning

confidence: 78%

“…Figure 2 shows the sheet resistance measurements obtained for Co/Ni/Si and Ni/Si systems annealed at different temperatures. For the Co/Ni/Si samples, the increase in sheet resistance occurs before 400°C resulting from the formation of Ni 2 Si phase [23]. For higher temperatures, the NiSi monosilicide is formed resulting in rapid decrease in sheet resistance.…”

Section: Accepted Manuscriptmentioning

confidence: 97%

Formation of (CoxNi1−x)Si2 ternary silicide by thermal annealing of evaporated Co/Ni thin films on Si substrate

Sedrati

Bouabellou

Derafa

et al. 2015

Vacuum

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“…Meanwhile, when the stacking sequence is reversed (i.e., an ultrathin Er film is used as an interlayer at the Ni/Si interface), it is reported that the interface characteristics are predominated by a NiSi-to-Si contact, independent of the Er thickness. 16 This emphasizes the importance of the stacking sequence to achieve a low contact resistance.…”

Section: Resultsmentioning

confidence: 99%

Defect-Free Erbium Silicide Formation Using an Ultrathin Ni Interlayer

Choi

Kang

et al. 2014

ACS Appl. Mater. Interfaces

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An ultrathin Ni interlayer (∼1 nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurred uniform nucleation and the growth of a subsequently formed erbium silicide film, effectively inhibiting the generation of recessed-type surface defects and improving the surface roughness. As a side effect, the complete transformation of Er to erbium silicide was somewhat delayed, and the electrical contact property at low annealing temperatures was dominated by the nickel silicide phase with a high Schottky barrier height. After high-temperature annealing, the early-formed interfacial layer interacted with the growing erbium silicide, presumably forming an erbium silicide-rich Er-Si-Ni mixture. As a result, the electrical contact property reverted to that of the low-resistive erbium silicide/Si contact case, which warrants a promising source/drain contact application for future high-performance metal-oxide-semiconductor field-effect transistors.

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Effect of erbium interlayer on nickel silicide formation on Si(100)

Cited by 10 publications

References 14 publications

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

A study of nickel and cobalt silicides formed in the Ni/Co/Si(1 0 0) system by thermal annealing

Formation of (CoxNi1−x)Si2 ternary silicide by thermal annealing of evaporated Co/Ni thin films on Si substrate

Defect-Free Erbium Silicide Formation Using an Ultrathin Ni Interlayer

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