Effect of experimental parameters and (Fe, Ni) doping on the structural, morphological, and optical properties of sol–gel dip-coated SnO₂ films

Abstract

Abstract

Design of SnO2:Ni,Ir Nanoparticulate Photoelectrodes for Efficient Photoelectrochemical Water Splitting

“…Finally, it decreased to 11.64 nm with an increased Ni doping ratio. Similar results were reported for the sol-gel dip-coated (Fe, Ni)-doped SnO 2 films [ 28 ]. In that paper, Benkara et al illustrated that the R rms strongly depends on the preparation and dipping conditions as well as the different kinetics of Fe and Ni needed for the growth of SnO 2 nanoparticles.…”

“…Moreover, the IR spectrum of SnO 2 film displays a broad peak around 3410 cm −1 , indicating the presence of O–H on the film surface. The IR absorption spectrum is size- and morphology-dependent [ 28 ]. The film doped with 3.0% Ni shows more intensive absorption bands compared with the films doped with 1.5 and 4.5% Ni.…”

Effects of Cobalt Doping on the Structural, Optical, and Electrical Properties of SnO2 Nanostructures Synthesized by SILAR Method

“…Hence, there is a gap in the literature on characterizing SnO2 thin films produced by different methods. Besides, it is noted that SnO2 nanostructures have a wider bandgap including a higher binding energy (130 meV) which may help enhancing the performance of the blue emission devices which are based on tin oxides [5,6].…”

“…One important method to accomplish better physical characteristic features of SnO2 films is to modify the traits of these semiconductor nanostructures by the introduction of transition metal dopants (Cr, Co, Fe, Ni, Mn, Zn, etc.) into the parent system [3,[6][7][8]. For example, the photoluminescence emission intensity and bandgap energy of SnO2 thin films, which can be significant factors that decide their successes in the optoelectronic applications, have been shown to be affected due to the presence of dopants in their crystal system [5,6,8].…”

“…into the parent system [3,[6][7][8]. For example, the photoluminescence emission intensity and bandgap energy of SnO2 thin films, which can be significant factors that decide their successes in the optoelectronic applications, have been shown to be affected due to the presence of dopants in their crystal system [5,6,8]. Among the dopant elements, the studies related to the incorporation of cobalt (Co; [Ar] 3d 7 4s 2 ) into the SnO2 lattices (SCO) are incomplete, even though cobalt has a broad branch of utilizations in batteries, catalysis and electroplating [9].…”