Effect of Ga+ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers

Katô, Hiroaki; Hamaya, Kohei; Kitamoto, Yoshitaka; Taniyama, Tomoyasu; Munekata, H.

doi:10.1063/1.1844751

Cited by 7 publications

(12 citation statements)

References 16 publications

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“…The introduction of additional charged centers after irradiation, as discussed above, can lead to a more inhomogeneous spatial distribution of regions with the Mn impurity band ("metallic" regions) that can modify the character of the magnetic anisotropy. The H C increase after ion irradiation was observed earlier for (Ga,Mn)As, note that it was accompanied by T C decrease [6,7].…”

Section: Magnetic Propertiessupporting

confidence: 59%

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Kudrin

Vikhrova

Danilov

et al. 2019

Journal of Magnetism and Magnetic Materials

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We investigate the nature of transport and ferromagnetic properties of the epitaxial GaAs structure with the Mn δdoped layer. To modify the properties of the structure electrically active radiation defects are created by irradiation with 50 keV helium ions and a fluence in the range of 1 × 10 11 -1 × 10 13 cm -2 . The investigations show that transport properties of the structure are determined by two parallel conduction channels (the channel associated with hole transport in a valence band and the channel associated with electron transport in the Mn-related impurity band) and that ferromagnetic properties are determined by electrons localized at allowed states within the Mn impurity band. The ferromagnetic properties of the Mn δ-layer region cannot be affected by the closely located InGaAs quantum well, since the presence of quantum well has negligible influence on the Mn impurity band filling by electrons.

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Section: Magnetic Propertiessupporting

confidence: 59%

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Kudrin

Vikhrova

Danilov

et al. 2019

Journal of Magnetism and Magnetic Materials

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“…A third path is the implantation of heavy ions in the GaMnAs sample. Beams of Ga + of 30 keV have been used to introduce deep trap levels in the epilayer [11]. In the two latter methods additional material is incorporated in the GaMnAs sample.…”

Section: Introductionmentioning

confidence: 99%

Ion-beam modification of the magnetic properties ofGa1−xMnxAsepilayers

et al. 2010

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We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown GaMnAs films and decreasing even further the number of carriers, through a sequence of irradiation doses. We did a systematic study of magnetization as a function of temperature and of the irradiation ion dose. We also performed insitu room temperature resistivity measurements as a function of the ion dose. We observe that both magnetic and transport properties of the samples can be experimentally manipulated by controlling the ion-beam parameters. For highly irradiated samples, the magnetic measurements indicate the formation of magnetic clusters together with a transition to an insulating state. The experimental data are compared with mean-field calculations for magnetization. The independent control of disorder and carrier density in the calculations allows further insight on the individual role of this two factors in the ion-beam-induced modification of GaMnAs.

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“…[8] Being motivated by the prospect of controlling the carrier concentration in (Ga,Mn)As with this approach, we have recently reported a preliminary experiment on the influence of Ga + ion irradiation on the ferromagnetic properties of (Ga,Mn)As using a focused ion beam (FIB) technique. [9] However, a systematic variation in the ferromagnetic features of (Ga,Mn)As was not obtained, although a sure sign that Ga + ion irradiation altered the hole carrier concentration and the corresponding magnetic properties was detected.…”

mentioning

confidence: 94%

“…In our recent studies, [10,14] it has been found that the in-plane magnetic anisotropy of (Ga,Mn)As/GaAs(001), which is composed of both 100 cubic magnetocrystalline anisotropy and [110] uniaxial anisotropy, [13,14,15] strongly depends on hole concentration, and that the contribution of [110] uniaxial anisotropy is enhanced with increasing hole concentration. [9,14] Thus, it is likely that 0.1 irradiated samples, which show a small contribution of [110] uniaxial anisotropy, have a lower hole concentration than noniraddiated samples. [9,14] To obtain clearer information about the mechanism of the change in the transport properties and the magnetic anisotropy shown in Figs.…”

mentioning

confidence: 99%

“…[9,14] Thus, it is likely that 0.1 irradiated samples, which show a small contribution of [110] uniaxial anisotropy, have a lower hole concentration than noniraddiated samples. [9,14] To obtain clearer information about the mechanism of the change in the transport properties and the magnetic anisotropy shown in Figs. 2 and 3, we estimate the hole concentration of irradiated samples from the T c vs hole concentration data shown in the inset of Fig.…”

mentioning

confidence: 99%

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Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As

Katô¹,

Hamaya²,

Taniyama³

et al. 2005

Jpn. J. Appl. Phys.

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We report on a promising approach to the artificial modification of ferromagnetic properties in (Ga,Mn)As using a Ga$^+$ focused ion beam (FIB) technique. The ferromagnetic properties of (Ga,Mn)As such as magnetic anisotropy and Curie temperature can be controlled using Ga$^+$ ion irradiation, originating from a change in hole concentration and the corresponding systematic variation in exchange interaction between Mn spins. This change in hole concentration is also verified using micro-Raman spectroscopy. We envisage that this approach offers a means of modifying the ferromagnetic properties of magnetic semiconductors on the micro- or nano-meter scale.Comment: 4 pages, 4 figures, to appear in Jpn. J. Appl. Phys. (Part 2 Letters

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Effect of Ga+ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers

Cited by 7 publications

References 16 publications

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer

Ion-beam modification of the magnetic properties ofGa1−xMnxAsepilayers

Ion Irradiation Control of Ferromagnetism in (Ga,Mn)As

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