Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon

Arulkumaran, S.; Ng, G. I.; Liu, Z. H.

doi:10.1063/1.2730748

Cited by 45 publications

(30 citation statements)

References 18 publications

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“…While, consistent with the "virtual gate" model, most of the attention has been given to the drain-gate surface area, there are studies [53]- [55] indicating that the source-gate surface may be equally important when it comes to current collapse. For sure, off-state bias and stress conditions, as well as the negative cycle of the RF input signal, may cause relatively large reverse bias on the gate-source junction and non-negligible leakage currents interacting with surface states.…”

Section: E the Effect Of The Source-gate Regionmentioning

confidence: 92%

Reliability of GaN-Based HEMT devices

Menozzi

2008

2008 Conference on Optoelectronic and Microelectronic Materials and Devices

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This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally linked with the much-debated "current collapse". The paper ends with some conclusive remarks on what has been achieved and what still lies ahead.

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Section: E the Effect Of The Source-gate Regionmentioning

confidence: 92%

Reliability of GaN-Based HEMT devices

Menozzi

2008

2008 Conference on Optoelectronic and Microelectronic Materials and Devices

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“…Silicon nitride ( SiN x ) is the most popular passivating dielectric used in HEMT technology and always receives the greatest attention, due to its full compatibility with Si technology. In addition, it resulted better than other common dielectrics like SiO 2 . Plasma enhanced chemical vapor deposition (PECVD) is a suitable method to deposit SiN layers on GaN HEMTs , due to its relatively low thermal budget (<400 °C), which can guarantee the stability of Ohmic contacts and implanted isolation regions.…”

Section: Algan/gan Hemtsmentioning

confidence: 99%

Challenges for energy efficient wide band gap semiconductor power devices

Roccaforte

Fiorenza

Greco

et al. 2014

Phys. Status Solidi A

128

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Wide band gap semiconductors, and in particular silicon carbide (4H‐SiC) and gallium nitride (GaN), are very promising materials for the next generation of power electronics, to guarantee an improved energy efficiency of devices and modules. As a matter of fact, in the last decade intensive academic and industrial research efforts have resulted in the demonstration of both 4H‐SiC MOSFETs and GaN HEMTs exhibiting VnormalB2/Ron performances well beyond the silicon limits. In this paper, some of the present scientific challenges for SiC and GaN power devices technology are reviewed. In particular, the topics selected in this work will be the SiO2/SiC interface passivation processes to improve the channel mobility in 4H‐SiC MOSFETs, the current trends for gate dielectrics in GaN technology and the viable routes to obtain normally‐off HEMTs.

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“…In recent years, heterojunction devices have provided better performance than MESFETs [4], which in the past were the most popular highfrequency and low-noise devices. The superior performance of the AlGaN/GaN HEMTs have been demonstrated to be ten times greater output power density than that of the conventional AlGaAs/GaAs HEMTs [5]- [6] due to the high field strength of nitride semiconductors and the polarizationeffect-induced high-density high-mobility 2-D electron gas (2DEG) [7]. Previously, double-channel HEMTs (DCHEMTs) have been employed in order to increase the saturation current level and output power [8]- [10].…”

Section: Introductionmentioning

confidence: 97%

Compare noise characteristic of DC-HEMT and HEMT

Sadeghi

Vadizadeh

Faez

2013

2013 21st Iranian Conference on Electrical Engineering (ICEE)

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Abstract_we compare noise characteristics of Al 0.3 Ga 0.7 N /GaN/ Al 0.06 Ga 0.94 N/GaN DC-HEMT and Al 0.3 Ga 0.7 N /GaN HEMT. The DC-HEMT exhibits high gain and high current and low noise. The noise characteristics are calculated as a function of gate voltage as well as drain voltage. The noise curve versus gate voltage also shows three regions. And also the noise curve versus drain voltage shows two regions. The first region is related to the triode region of the transistor where the noise decreases with increase of the drain voltage. The second region is related to the saturation region of the transistor where the noise is almost constant.

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Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon

Abstract: Articles you may be interested inHigh breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Cited by 45 publications

References 18 publications

Reliability of GaN-Based HEMT devices

Reliability of GaN-Based HEMT devices

Challenges for energy efficient wide band gap semiconductor power devices

Compare noise characteristic of DC-HEMT and HEMT

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