Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors

et al. 2009

jjap

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Hot-carrier-induced degradation in p-type drain extended metal-oxide-semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state (ÁN it ) in the channel region, ÁN it in the drift region under poly-gate, and negative oxide-trapped charge (ÁN ot ) in the drift region outside poly-gate are responsible for device parameter degradation. ÁN it in the channel region causes threshold voltage and maximum transconductance degradation. ÁN ot in the drift region outside poly-gate leads to the increase of linear drain current (I dlin ) at the beginning of stress. ÁN it in the drift region under poly-gate results in the turnaround behavior of jI dlin j shift as the stress time is longer.

Section: Introductionmentioning

confidence: 99%

Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors

Chen¹,

et al. 2009

jjap

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“…Moreover, hot-carrierinduced device degradation, caused by damage of the Si-SiO 2 interface and=or gate oxide due to a high electric field near the drain end of the channel, is an important reliability concern. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] To achieve a high V BD in high-voltage n-type MOS transistors, a lightly doped n − drift region is typically added next to the drain. The doping concentration of the n − drift region has been shown to significantly affect the V BD and hot-carrier-induced degradation of high-voltage n-type MOS transistors.…”

Section: Introductionmentioning

confidence: 99%

Drift region doping effects on characteristics and reliability of high-voltage n-type metal–oxide–semiconductor transistors

Chang

Liu

et al. 2015

Jpn. J. Appl. Phys.

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In this study, off-state breakdown voltage (V BD) and hot-carrier-induced degradation in high-voltage n-type metal–oxide–semiconductor transistors with various BF2 implantation doses in the n− drift region are investigated. Results show that a higher BF2 implantation dose results in a higher V BD but leads to a greater hot-carrier-induced device degradation. Experimental data and technology computer-aided design simulations suggest that the higher V BD is due to the suppression of gate-induced drain current. On the other hand, the greater hot-carrier-induced device degradation can be explained by a lower net donor concentration and a different current-flow path, which is closer to the Si–SiO2 interface.

Analysis of high-voltage metal–oxide–semiconductor transistors with gradual junction in the drift region

Tsai

et al. 2016

Jpn. J. Appl. Phys.

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The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal–oxide–semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this study is realized by self-aligned N− implantation through dual thicknesses of screen oxide during N− drift implantation. Compared with traditional devices, devices with gradual junctions have improved off-state breakdown voltage (V BD) without sacrificing on-state driving current and hot-carrier-induced degradation. More improvement in V BD is observed if the dimensions of the device are larger. The mechanism responsible for V BD improvement in devices with gradual junctions is also investigated by using technology computer-aided-design simulations.