The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal-oxide-semiconductor (LDMOS) fieldeffect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current (I g ) consists mainly of the electron injection, I g correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.

Hot-carrier-induced degradation in p-type drain extended metal-oxide-semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state (ÁN it ) in the channel region, ÁN it in the drift region under poly-gate, and negative oxide-trapped charge (ÁN ot ) in the drift region outside poly-gate are responsible for device parameter degradation. ÁN it in the channel region causes threshold voltage and maximum transconductance degradation. ÁN ot in the drift region outside poly-gate leads to the increase of linear drain current (I dlin ) at the beginning of stress. ÁN it in the drift region under poly-gate results in the turnaround behavior of jI dlin j shift as the stress time is longer.

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The phenomenon and mechanism of hot-carrier-induced on-resistance (R on ) degradation for the n-type lateral diffused metaloxide-semiconductor (MOS) transistors stressed under various gate voltages (V g ) are investigated. R on degradation of the device is found to be attributed to the interface state (N it ) generation in the N À drift region. Moreover, R on degradation is almost identical for the devices stressed under medium V g and high V g , despite the fact that bulk current of the device is much greater at high V g bias. Such an anomalous R on degradation is suggested to be the result of two combined factors: the magnitude of impact ionization rate and N it generation efficiency.

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