Recently, the CoGeNT experiment has reported events in excess of expected background. We analyze dark matter scenarios which can potentially explain this signal. Under the standard case of spin independent scattering with equal couplings to protons and neutrons, we find significant tensions with existing constraints. Consistency with these limits is possible if a large fraction of the putative signal events is coming from an additional source of experimental background. In this case, dark matter recoils cannot be said to explain the excess, but are consistent with it. We also investigate modifications to dark matter scattering that can evade the null experiments. In particular, we explore generalized spin independent couplings to protons and neutrons, spin dependent couplings, momentum dependent scattering, and inelastic interactions. We find that some of these generalizations can explain most of the CoGeNT events without violation of other constraints. Generalized couplings with some momentum dependence allow further consistency with the DAMA modulation signal, realizing a scenario where both CoGeNT and DAMA signals are coming from dark matter. A model with dark matter interacting and annihilating into a new light boson can realize most of the scenarios considered.
Articles you may be interested inPhysical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 99, 012106 (2011); 10.1063/1.3608241 Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxidesemiconductor transistors Appl. Phys. Lett. 92, 243501 (2008); 10.1063/1.2947588 Convergence of hot-carrier-induced saturation-region drain current and linear-region drain current degradation in advanced n-channel metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 83, 1872 (2003); 10.1063/1.1605247Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.