2017
DOI: 10.1088/2053-1591/aa9597
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Effect of Gd doping on structure and photoluminescence properties of ZnO nanocrystals

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Cited by 47 publications
(23 citation statements)
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“…The observed blue emission band at 470 nm was associated with the intrinsic defects emission within the ZnO host [64]. Some groups also indicate that this blue emission arises as a result of the recombination of zinc interstitial energy level to zinc vacancy energy level [57,65]. Oxygen vacancies and intrinsic defects can be attributed to the origin of the green band (541) [66].…”
Section: Uv-vis Spectroscopymentioning
confidence: 95%
See 1 more Smart Citation
“…The observed blue emission band at 470 nm was associated with the intrinsic defects emission within the ZnO host [64]. Some groups also indicate that this blue emission arises as a result of the recombination of zinc interstitial energy level to zinc vacancy energy level [57,65]. Oxygen vacancies and intrinsic defects can be attributed to the origin of the green band (541) [66].…”
Section: Uv-vis Spectroscopymentioning
confidence: 95%
“…The sharp UV emission band at 383 nm was associated with the near band-edge (NBE) emission of ZnO [56]. This band origin is due to the direct recombination of ZnO free excitons [57,58]. The wide noticeable range in 400 nm to 600 nm wavelength region is due to deep-level defects in the crystal such as vacancies and oxygen and zinc interstitials [59,60].…”
Section: Uv-vis Spectroscopymentioning
confidence: 99%
“…This peak corre- The absorption spectra of ZnO nanoparticle films with and without dye adsorption are shown in Figure 2a, in which the spectra are normalized at 300 nm. For the ZnO nanoparticle film, the absorption spectrum reveals the shoulder at about 360 nm, which corresponds to the absorption band of ZnO nanoparticles [21]. As shown from the Tauc plot in Figure S4, the band gap of synthesized ZnO is determined to be 3 eV (413 nm), which is higher compared to that reported band gap value of 2.88 eV for ZnO thin film [22].…”
Section: Resultsmentioning
confidence: 72%
“…Metal oxide semiconducting nanostructures doped with trivalent lanthanides ions (Ln 3+ ) are one of the most promising materials having most different applications in the field of light-emitting displays, magnetic recording media, photocatalysis and optical storage [1][2][3][4]. The optical emissions arising from the surface defect states of these semiconductors are effectively controlled by incorporating rare earth (RE) ions [1]. RE ions are considered to be the better luminescent centers because of their intra-shell transitions which can produce narrow and intense emission lines [1,5].…”
Section: Introductionmentioning
confidence: 99%
“…The optical emissions arising from the surface defect states of these semiconductors are effectively controlled by incorporating rare earth (RE) ions [1]. RE ions are considered to be the better luminescent centers because of their intra-shell transitions which can produce narrow and intense emission lines [1,5]. The RE ions are incorporated into metal oxide semiconductors for the modification of electronic structure to improve optical, magnetic and catalytic properties [6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%