Effect of growth rate on surface morphology of heavily carbon-doped InGaAs

Abstract

Heavily carbon-doped In 0.53 Ga 0.47 As on InP (001) substrate grown by solid source molecular beam epitaxy Growth of carbon doping Ga 0.47 In 0.53 As using CBr 4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy

“…The results suggest that the carbon species behave like As during the GaAs:C growth process. This is different from carbon doping in chemical beam epitaxy (CBE) using CBr 4 as p-dopant precursor [17], in which all carbon atoms reaching the growth surface are incorporated and no accumulation of carbon species at the growth front occurs. In our experiment, the surface roughness is B3 ( A and the lattice mismatch is consistent with Vegard's Law.…”

CBr4 and Be heavily doped InGaAs grown in a production MBE system

“…Moreover, results show that carbon-doping compensation takes place from higher CBr 4 pressures when a low As 4 flux is used: from about 0.45 Torr for the low As 4 flux and from 0.2 Torr, which corresponds to a hole concentration of 4 Â 10 19 cm À3 , for the high As 4 flux. From 0.5 Torr with the high As 4 flux, a deterioration of the surface morphology has been observed as already reported when high CBr 4 pressures are used in SSMBE [8] or CBE [9,10] processes.…”

Surface morphology of heavily carbon-doped GaAs grown by solid source molecular beam epitaxy

“…This paper reports the surface morphology of carbon-doped GaAs (GaAs:C) samples grown by solid source molecular beam epitaxy (SSMBE) using carbon tetrabromide (CBR 4 ) as p-dopant All data are from Kuhl et al [15].…”

“…The surface morphology data of InGaAs:C samples in Kuhl et al's report are summarized in Table 3, which show higher surface roughness in samples with higher dicarbon defect concentration. So far, apart from the report by Kuhl et al [15], no further literature is available on the surface morphology of InGaAs:C. Therefore, further investigation is needed to provide more evidence on the effect of dicarbon defects on InGaAs:C surface morphology.…”

“…We suggest the contribution of dicarbon defects to surface morphology may not be limited only to GaAs:C. Kuhl et al [15] has reported a study on surface morphology of C-doped InGaAs (InGaAs:C), where the samples were grown by chemical beam epitaxy (CBE) using CBr 4 as carbon source. Experimenting with two growth rates (0.6 and 1.3 mm/h), it was mentioned in the report that samples grown at low growth rate have lower dopant activation rate (or hole/carbon concentration ratio) compared to samples grown at high growth rate.…”