Effect of H₂ content on reliability of ultrathin in-situ steam generated (ISSG) SiO₂

Characterization of silicon dioxide films on 4H-SiC Si (0001) face by cathodoluminescence spectroscopy and x-ray photoelectron spectroscopy

“…[2][3][4][5] The presence of interface traps in SiC MOS field-effect transistors (FETs) is attributed to (1) excess carbon, 4,6 (2) interface defects due to the presence of threefold coordinated O and C interstitial atoms, 4,6 and (3) point defects such as Si and O vacancies that extend into the SiC layer underneath the SiO 2 / SiC interface; the extending of the point defects was determined via a comparison with SiO 2 films grown on a Si substrate. 7,8 Although post-oxidation annealing (POA) by H 2 , 2 NO, 9,10 or N 2 O (Refs. 3 and 11-13) effectively increases the CM, few studies have focused on effect of POA on the microstructure of SiO 2 films on SiC wafers.…”

Bottom Nitridation Engineering of Multi-Nitridation ONO Interpoly Dielectric for Highly Reliable and High Performance NAND Flash Memory

“…The nitrogen profiles are much decreased from 2E3 to 1.3E3 c/s by longer plasma O 2 densification time, lower nitrogen dose, or ISSG bottom oxidation. For ISSG bottom oxide sample, the nitrogen pile up location is more far away from the interface of floating gate polysilicon, which should due to the active oxygen atom of ISSG attack the Si-N bonding at FG interface and replace it to SiO 2 [7]. This profile is most preferred for further scaling of MN-ONO from the reliability and IPD EOT reduction points of view.…”

Infrared absorption study of rapid thermal oxidation and in situ steam generation of thin SiO2 films by gradient etching preparation

“…Luo et al studied the effect of H 2 content during ISSG oxidation from the point of view of stress-induced leakage current ͑SILC͒ and charge to breakdown ͑QBD͒. 4 They changed the hydrogen content from 0.5% to 2%, and demonstrated that the presence of hydrogen during oxide growth improves the oxide quality and reliability. They also speculated that the presence of hydrogen accelerates dissociation of molecular oxygen into reactive atomic oxygen, which in turn reduces intrinsic oxide defects by repairing Si dangling bonds, Si-Si bonds, and strained Si-O bonds in the structural transition layer.…”

“…Several fabrication processes for making good gate oxide films have been proposed, such as rapid thermal oxidation ͑RTO͒ and in situ steam generation ͑ISSG͒, by applying silicon-based technologies from the viewpoint of stable high reliability fabrication. 4,5 It is believed that the SiO 2 /Si interface has an important role in stimulating electrical performance in the fabrication of ULSI devices. Therefore, we believe that it is very important to investigate the depth profiling of Si-based newly developed ultrathin oxide films.…”