2020
DOI: 10.1016/j.nimb.2019.11.005
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Effect of hafnium contaminant present in zirconium targets on sputter deposited ZrN thin films

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Cited by 23 publications
(15 citation statements)
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“…Besides the peaks related to carbon (from the substrate) and zirconium, silicon and nitrogen originated from thin films, peaks related to oxygen and hafnium can be observed. Such contaminants were previously identified by our research group [16,17]. Oxygen atoms are originated from deposition chamber and hafnium is inherent to Zr target.…”
Section: Resultsmentioning
confidence: 97%
“…Besides the peaks related to carbon (from the substrate) and zirconium, silicon and nitrogen originated from thin films, peaks related to oxygen and hafnium can be observed. Such contaminants were previously identified by our research group [16,17]. Oxygen atoms are originated from deposition chamber and hafnium is inherent to Zr target.…”
Section: Resultsmentioning
confidence: 97%
“…Researchers may be inadvertently adding Hf or other defects into their films even when they think they may have an ultrahigh‐pure precursor material, complicating optical properties with less expensive but chemically dubious targets. This presents an interesting tradeoff: the incorporation of small quantities of Hf atoms may increase microhardness in ZrN films [ 30 ] (additionally a more economical alternative compared with the use of highly pure Zr precursors), which is relevant to industrial applications in hard, durable, and decorative coatings for extreme environments, but this may also lead to a larger imaginary part of permittivity arising from incorporation of the inherently more lossy HfN in the ZrN host material and a decrease in the damage threshold of a ZrN film, limiting its value in extreme environments.…”
Section: Discussionmentioning
confidence: 99%
“…The role of Hf impurities in sputtered ZrN films has been explored to some extent regarding its hardness and oxidation resistance at high temperature, [ 30 ] but the effects of these Hf defects on permittivity of the Hf x :Zr y N z system are unreported and of large value to reducing the barrier to entry of studies relying on the optical properties of sputtered ZrN and attainment of low‐loss plasmonic materials. To explore the effects on permittivity of this nontrivial Hf concentration and determine whether impurities play a significant role in ZrN optical properties, our approach is to measure the structural, chemical, and optical properties of ZrN films grown on Si and c‐sapphire substrates with reactive RF magnetron sputtering from a Kurt Lesker‐grade 702 Zr target (having Hf impurities) over a broad Zr and N stoichiometry range.…”
Section: Introductionmentioning
confidence: 99%
“…The introduction of up to 11.9 at.% Hf in the ZrN coating did not affect the level of residual stresses [29]. According to [30], when the content of Hf increases from 0.9 to 3.7 at.%, the hardness of the coating and its oxidation resistance increases at 500 • C, while with a further increase in the content of Hf to 5.5 at.%, the hardness and oxidation resistance decrease. At 600 • C, the coatings are actively oxidized, and the content of Hf does not have any noticeable effect on the process of active oxidation [30].…”
Section: Introductionmentioning
confidence: 96%