1996
DOI: 10.1016/0022-0248(96)00308-9
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Effect of heat treatment on the properties of ZnO thin films prepared by successive ion layer adsorption and reaction (SILAR)

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Cited by 58 publications
(26 citation statements)
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“…After heating at 450°C some of the crystallites lose their preferred orientation along the c axis and this leads to an increase in the dark conductivity of pure, Niand Cd-impurified ZnO thin films. An explanation for this result may be the orientation loss and a diminishing grain size (20-30 A > ) (22) of the crystallites, which contribute to the conductivity increase, due to an increase of the electron density in the conduction band. Another contribution to the dark current after the annealing is the formation of oxygen vacancies and cation interstitials, as already discussed for the case of pure ZnO (22).…”
Section: Electrical Conductivity and Photoconductivitymentioning
confidence: 86%
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“…After heating at 450°C some of the crystallites lose their preferred orientation along the c axis and this leads to an increase in the dark conductivity of pure, Niand Cd-impurified ZnO thin films. An explanation for this result may be the orientation loss and a diminishing grain size (20-30 A > ) (22) of the crystallites, which contribute to the conductivity increase, due to an increase of the electron density in the conduction band. Another contribution to the dark current after the annealing is the formation of oxygen vacancies and cation interstitials, as already discussed for the case of pure ZnO (22).…”
Section: Electrical Conductivity and Photoconductivitymentioning
confidence: 86%
“…An explanation for this result may be the orientation loss and a diminishing grain size (20-30 A > ) (22) of the crystallites, which contribute to the conductivity increase, due to an increase of the electron density in the conduction band. Another contribution to the dark current after the annealing is the formation of oxygen vacancies and cation interstitials, as already discussed for the case of pure ZnO (22). In the case of doping with Cu, these films gradually lose the preferred orientation without a dark current increase taking place.…”
Section: Electrical Conductivity and Photoconductivitymentioning
confidence: 86%
“…Up to now, many existing thin film preparation techniques have been applied in the synthesis of zinc oxide films, including chemical vapor deposition [9], sputtering [12], pulsed laser deposition [15], molecular beam epitaxy [16], sol-gel techniques [17], chemical bath deposition [18], successive ionic layer adsorption and reaction (SILAR) [19][20][21][22][23][24][25], et al However, it is well conceived that preparation of zinc oxide films via solution chemical routes provides a promising option for large-scale production of zinc oxide materials. SILAR method, first reported by Nicolau in 1985, involves the substrate alternate immersion in cationic and anionic precursor and the substrate rinsing procedures in between.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, an investigation of ZnO nanostructures is of critical importance for the development of novel devices. Due to the multipurpose use of zinc oxide a number of research groups have deposited the ZnO thin films by various methods, such as molecular beam epitaxy [6], chemical vapour deposition [7], radio frequency magnetron sputtering [8], chemical bath deposition [9], spray pyrolysis [10], successive ionic layer adsorption and reaction (SILAR) [11], etc.…”
Section: Introductionmentioning
confidence: 99%