Effect of High-K Dielectrics in Different Doping Concentrations in a Junctionless GAA Nanowire Transistor Structure

Saha, Riya; Ahmed, Riaz; Das, Puja; Singha, Showmik; Adnan, Md. Mohsinur Rahman

doi:10.1109/iciet48527.2019.9290638

2019 2nd International Conference on Innovation in Engineering and Technology (ICIET) 2019

DOI: 10.1109/iciet48527.2019.9290638

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Effect of High-K Dielectrics in Different Doping Concentrations in a Junctionless GAA Nanowire Transistor Structure

Riya Saha

Riaz Ahmed

Puja Das

et al.

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Cited by 3 publications

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A Study on influence of geometric parameters in Gate All Around Transistors

Sundari T,

Paramasivam,

V P

et al. 2023

2023 2nd International Conference on Advancements in Electrical, Electronics, Communication, Computing and Automation (ICAECA)

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Effect of High-K Dielectrics in Different Doping Concentrations in a Junctionless GAA Nanowire Transistor Structure

Cited by 3 publications

References 10 publications

A Study on influence of geometric parameters in Gate All Around Transistors

A Study on influence of geometric parameters in Gate All Around Transistors

Scaling Beyond 7nm Node: An Overview of Gate-All-Around FETs

DC and RF Performance Analysis of Junctionless Gate All Around Nanosheet MOSFET

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