Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

Liu, Bo; Zhang, Sen; Yin, Jun; Zhang, Xiongwen; Dun, Shaobo; Feng, Zhihong; Cai, Shujun

doi:10.1088/1674-1056/22/5/057105

Cited by 9 publications

(7 citation statements)

References 18 publications

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“…The Si-based LEDs have become a hot research topic. [27][28][29][30][31][32] There are already some publications about semi-polar (1 101) GaN grown on patterned Si (100) substrate. [33][34][35][36][37] Most of these studies focus on the growing of single-layer semi-polar GaN films, blue-green LEDs, blue lasers, and high-In content InGaN/GaN MQWs.…”

Section: Introductionmentioning

confidence: 99%

Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

et al. 2019

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The epitaxial growth of novel GaN-based light-emitting diode (LED) on Si (100) substrate has proved challenging. Here in this work, we investigate a monolithic phosphor-free semi-polar InGaN/GaN near white light-emitting diode, which is formed on a micro-striped Si (100) substrate by metal organic chemical vapor deposition. By controlling the size of micro-stripe, InGaN/GaN multiple quantum wells (MQWs) with different well widths are grown on semi-polar ( 1 1 ¯ 01 ) planes. Besides, indium-rich quantum dots are observed in InGaN wells by transmission electron microscopy, which is caused by indium phase separation. Due to the different widths of MQWs and indium phase separation, the indium content changes from the center to the side of the micro-stripe. Various indium content provides the wideband emission. This unique property allows the semipolar InGaN/GaN MQWs to emit wideband light, leading to the near white light emission.

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Section: Introductionmentioning

confidence: 99%

Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

et al. 2019

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“…Most of them use multipleintermediate layers. [3][4][5][6] Another way is reducing the size of the crystal on the substrate. [7] In spite of the rapid developments in the high-brightness LEDs, the efficiency of an LED, especially in the green light region, still needs to be improved.…”

Section: Introductionmentioning

confidence: 99%

Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

陈龙

裴嘉鼎²,

史达特³

et al. 2015

Chinese Phys. B

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Semi-polar (1 − 101) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting {111} planes of microscale V-grooved Si in metal–organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1 − 101) GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.

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“…Its ultrahigh band-gap makes AlN an especially key material for applications in the solid-state light sources such as light-emitting diodes [2,3] and laser diodes, [4] operating in the deep ultraviolet spectral range. Recent technical achievements have enabled researchers to fabricate AlN films by a variety of methods (including metal-organic chemical vapor deposition (MOCVD), [5][6][7][8] molecular beam epitaxy (MBE), [9,10] and others [11,12] ). However, the lattice mismatch between AlN film and the substrates produces a high density of misfit dislocations, which act as non-radiative recombination centers, reducing the performance of the devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

Wang¹,

Jin²,

Liu³

et al. 2014

Chinese Phys. B

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The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short as ∼ 177 nm. Annealing experiments were carried out in either N 2 or vacuum atmosphere with the annealing temperature ranging from 1200 • C to 1600 • C. It is found that surface roughness reduced and compressive strain increased with the annealing temperature increasing in both annealing atmospheres. As to optical properties, a band-edge emission peak at 6.036 eV and a very broad emission band peaking at about 4.7 eV were observed in the photoluminescence spectrum of the as-grown sample. After annealing, the intensity of the band-edge emission peak varied with the annealing temperature and atmosphere. It is also found that a much stronger emission band ranging from 2.5 eV to 4.2 eV is superimposed on the original spectra by annealing in either N 2 or vacuum atmosphere. We attribute these deep-level emission peaks to the V AL -O N complex in the AlN material.

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Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

Cited by 9 publications

References 18 publications

Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition

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