Monolithic semi-polar (
	    


	    
1


1


¯


01

	    
	  ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Wang, Qi; Yuan, Guodong; Liu, Wenqiang; Zhao, Shuai; Zhang, Lu; Liu, Zhiqiang; Wang, Junxi; Li, Jinmin

doi:10.1088/1674-1056/28/8/087802

Cited by 22 publications

(14 citation statements)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A variety of GaN monolithic photonic circuits have been reported using a standard foundry process. 15 − 22 There is the desire to realize a compact optoelectronic system on a chip. Park et al developed an ion bombardment approach to create regions of high electrical resistance, producing arrays of InGaN/GaN light-emitting diodes (LEDs) with a resolution as high as 8500 pixels per inch.…”

Section: Introductionmentioning

confidence: 99%

Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

2022

View full text Add to dashboard Cite

The demand for on-chip multifunctional optoelectronic systems is increasing in the Internet-of-Things era. Spectral emission–detection overlap endows an InGaN/GaN quantum well diode (QWD) with an intriguing capability to detect and modulate light emitted by itself, which is of great interest when merging electronics and photonics together on a single chip for the development of advanced information systems. When biased and illuminated at approximately the same time, the InGaN/GaN QWD can achieve light emission and detection simultaneously. Herein, we experimentally demonstrate the simultaneous emission–detection phenomenon and analyze the irreversibility of spectral emission–detection overlap according to energy diagram theory, which may answer why the QWD can only detect and modulate higher-energy photons than those emitted by itself.

show abstract

Section: Introductionmentioning

confidence: 99%

Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

2022

View full text Add to dashboard Cite

show abstract

“…Furthermore, owing to their identical molecular radius, trivalent luminous lanthanide (Ln 3+ ) particles may effortlessly integrate to the fluoridebuilt crystalline structure influenced matrices and exhibit exceptionally optimal brightness at ambient temperature [7]- [9]. Among many RE particles, the Eu 3+ is the most effective dopant for several hosts in terms of creating red emission, with photo illumination lasting several milliseconds or longer [10]. Rare-earth fluorides have been exceptionally steady substrates for the doping of multiple optically engaged Eu 3+ particles.…”

Section: Introductionmentioning

confidence: 99%

SiO2@LaOF:Eu3+ in white light emitting diodes optic efficiency enhancement

Huu

Luo²,

Quang³

2022

Bulletin EEI

View full text Add to dashboard Cite

The earliest intense red hue compound of SiO2@LaOF:Eu3+ core-shell nanostructures (NS) was created utilizing a basic solvothermal technique and heat processing. The produced core-shell particles are spherical, non-agglomerated, and have restricted size dispersion. Photoluminescence (PL) radiation spectra exhibit sharp maximums in 593, 611, and 650 nm, corresponding with 5D0 -- 7FJ (J=0, 1, 2) Eu3+ conversions. The Judd-Ofelt (J-O) hypothesis helps determine the spectrum strength indices and Eu-O ligand activities. The CIE coordinates are x=0.63, y=0.36, nearly equal the NTSC coordinates which are x=0.67, y=0.33. Because of the CCT level of 3475 K, which is lower than 5000 K, this phosphor is appropriate for warm light-emitting diodes. To visualize latent fingermarks both porous and non-porous substrates, the fluorescent labeling marker adapted core-cover SiO2 (coat III)@LaOF:Eu3+ (5 mol%) was utilized. With no background influence, the fingermarks obtained are exceedingly sensible and exclusive, permitting for fingerprint ridge features ranging from level-I to level-III. The findings indicate the significant enhancement in the illumination of corecover NS as a responsive operational nanoparticle for increased forensics and firm status illuminating implementations.

show abstract

“…Because of its configurable luminosity, large heat stability, good mechanical power, and effortlessness of production [1]- [4], phosphorus-in-glass (PiG) is a potential epoxy-free hue adapter in increased-strength white lightings including advertising white light-emitting diodes (WLEDs) and the upcoming version of laser-influenced white-emitted illumination. Yellow-emitted PiG has been developed via fusing YAG phosphorus ions in a glass substrate at low temperatures, also it has recently been used in distant-kind WLEDs [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

Study of ZnS:Mn2+,Te2+ phosphor for improving the hue rendering indicator of WLEDs

Bui

Loan

2022

Bulletin EEI

View full text Add to dashboard Cite

This research combines a phosphor-in-glass (PiG) YAG:Ce3+ with a red liquid-type quantum dot (LQD) to invent high-quality white light-emitting diodes (WLEDs). When the PiG LQD-built WLEDs reach 100 mA, they provide heated white illumination offering an outstanding color rendering index (CRI) (Ra=93.9, R9=97.7, and R13=98.1). The luminescent efficiency (LE) and correlating chromatic temperature, correspondingly, are 62 lm/W and 3764 K. In comparison to PiG integrated with solid-kind quantum dot, it has great LE, remarkable CRI, and lower top layer temperature because of self-aggregation and impediment in the outside flaws in semiconductor quantum dots (QDs) of the solid-condition, as well as effective thermal dissipation. The findings suggest that the produced WLEDs could be potential in high-quality lighting applications.

show abstract

Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

Cited by 22 publications

References 44 publications

Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

Experimental Demonstration and Theoretical Analysis of Simultaneous Emission–Detection Phenomenon

SiO2@LaOF:Eu3+ in white light emitting diodes optic efficiency enhancement

Study of ZnS:Mn2+,Te2+ phosphor for improving the hue rendering indicator of WLEDs

Contact Info

Product

Resources

About