Effect of hole injection in AlGaN/GaN HEMT with GIT structure by numerical simulation

Chonan, Hiroshi; Ide, Toshihide; Shen, Xu–Qiang; Shimizu, Mitsuaki

doi:10.1002/pssc.201100330

Cited by 6 publications

(3 citation statements)

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“…9 shows measured VGS and IG for different values of the gate driver circuit components. The effect of hole injection into the channel occurs in the p-gate structured HEMT in accordance to [23]. These holes are injected from the p-AlGaN layer into or through the two-dimensional electron-gas (2DEG), when the bias voltage VGS exceeds the bandgap energy of the GaN-layer [24].…”

Section: A Electrical Type Of Failurementioning

confidence: 99%

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs

Castellazzi

Fayyaz

Zhu

et al. 2018

2018 IEEE International Reliability Physics Symposium (IRPS)

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Short-circuit withstand capability is a key requirement for semiconductor power devices in a number of strategic application domains, including traction, renewable energies and power distribution. Indeed, though clearly a nonintentional operational mode, sort-circuit can be nonetheless a relatively frequent event. Due to its associated considerable electro-thermal stress levels, a thorough analysis of both single pulse withstand capability and device aging as a result of repetitive stress are mandatory before widespread deployment of new device technologies. In this paper, the focus is on latest generation commercial gate-injection GaN transistors, in the 600 V rating class. Extensive experimental analysis is presented, putting forward an interpretation of the underlying degradation and failure mechanisms, supported by coupled electro-thermal device models, incorporating both the functional and structural characteristics of the devices. The findings highlight a remarkable robustness of a specific type of p-gate GaN HEMTs, referred to as gate injection transistors (GITs), against shortcircuit stress, making them a potentially very attractive and competitive technology in the voltage class of relevance.

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Section: A Electrical Type Of Failurementioning

confidence: 99%

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs

Castellazzi

Fayyaz

Zhu

et al. 2018

2018 IEEE International Reliability Physics Symposium (IRPS)

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“…Therefore, p-GaN design is crucial for 2DEG modulation, which allows a tailored V th close to 0 V. Moreover, above a certain gate voltage, hole injection from p-GaN layer induces additional electrons accumulate in the 2DEG channel and thus high electron current. [23][24][25] Besides, p-GaN layer can be used to leverage hole current of gate p-n diode as another current path to enhance the on-state current capability. 26) In this paper, we have demonstrated an AC-DC rectifier with extremely low turn-on voltage by using p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) in diode configuration.…”

Section: Introductionmentioning

confidence: 99%

Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

Zhang¹,

Kawata²,

Iwata³

2021

Jpn. J. Appl. Phys.

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We have demonstrated an extremely low voltage rectifier by using p-GaN gate AlGaN/GaN high electron mobility transistors. In contrast to conventional GaN rectifiers, the turn-on voltage and on-state current can be decoupled, resulting in low turn-on voltage of 0.05 V and high on-state current achieved simultaneously with p-GaN designs. Furthermore, the role of p-GaN layer on current–voltage characteristics of p-GaN gated anode diode was investigated, indicating the p-GaN layer is the source of hole current. Combined the electron current with hole current, the total current was enhanced significantly with the ohmic p-GaN gate electrode. Finally, full-wave AC to DC rectification was demonstrated by a monolithically-integrated diode bridge rectifier with four p-GaN gated anode diodes. The bridge rectifier is able to operate at an input signal as low as 0.18 V, which is very promising for future power conversion applications.

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“…In the p-gate structured HEMT the effect of hole injection occurs according to [11]. The holes can be injected from the gate electrode into the GaN channel (2DEG), when the voltage V GS exceeds the bandgap energy of GaN [12].…”

Section: Article In Pressmentioning

confidence: 99%

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

Oeder

Castellazzi

Pfost

2017

Microelectronics Reliability

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A B S T R A C TA study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit.

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Effect of hole injection in AlGaN/GaN HEMT with GIT structure by numerical simulation

Cited by 6 publications

References 0 publications

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs

Single pulse short-circuit robustness and repetitive stress aging of GaN GITs

Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

Electrical and thermal failure modes of 600 V p-gate GaN HEMTs

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