2010
DOI: 10.1063/1.3374402
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Effect of incident light power on Schottky barriers and I-V characteristics of organic bulk heterojunction photodiodes

Abstract: The space charge region (SCR) width of the Schottky barrier (SB) that forms on the interface between aluminum and organic semiconductor polymer of bulk-heterojunction (BH) organic photodiodes (OPD) based on poly(3-hexylthiophene) (P3HT): [6,6]-phenyl-C61-butyric acid methylester (PCBM) blend, has been investigated according to reverse voltage bias over the OPD. We focused on the effect of incident light power (ILP) on the SCR and the I-V characteristics of the devices. Comparison of the mathematical models and… Show more

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Cited by 6 publications
(3 citation statements)
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“…The well known active nanocomposite consists of poly (3-hexylthiophene) (P3HT) as the p-type semiconductor and ( [6,6]-phenyl C 60 -butyric acid methyl ester) (PCBM) as an electron-conducting material, is one of the most studied. Its characteristics are now well documented; see for example recent papers on texture and morphology [2][3][4][5][6][7], dark and light electronic behavior [8][9][10], and stability and degradation [11][12][13][14]. Promising routes for increasing efficiencies and duration times based on the P3HT:PCBM blend have been envisaged [11].…”
Section: Introductionmentioning
confidence: 99%
“…The well known active nanocomposite consists of poly (3-hexylthiophene) (P3HT) as the p-type semiconductor and ( [6,6]-phenyl C 60 -butyric acid methyl ester) (PCBM) as an electron-conducting material, is one of the most studied. Its characteristics are now well documented; see for example recent papers on texture and morphology [2][3][4][5][6][7], dark and light electronic behavior [8][9][10], and stability and degradation [11][12][13][14]. Promising routes for increasing efficiencies and duration times based on the P3HT:PCBM blend have been envisaged [11].…”
Section: Introductionmentioning
confidence: 99%
“…In the field of organic semiconductors, capacitancefrequency (C-F), and capacitance-voltage (C-V ) methods are widely used to study their properties, including doping density, [1][2][3][4] deep trap states, [5][6][7] carrier mobility, [8][9][10] etc. A common issue in these studies is the selection of a circuit model (i.e., parallel or series model), which is critical to the accurate determination of the device capacitance.…”
Section: Introductionmentioning
confidence: 99%
“…[1,2] The working principles, as well as the device performance and charge transfer modeling had also been studied gradually. [3,4] Despite some achievements were obtained for understanding the mechanism of HPSCs in recent years, however, there was also not forming a complete and unified system in theoretical recognization on device physics, for example, there are some different viewpoints to recognize the factors that affect the open-circuit voltage (V oc ): the V oc can be enhanced by the superposition of the built-in field with the interfacial dipole of the interlayer; [5] the dissociation rate and decay rate of photo-induced electron-hole pairs also influence the open-circuit voltage; [6] the origin of this difference in the V oc has been proven to be directly related to the crystallization properties of active layer. [7] In this paper, we fabricated the MEH-PPV/ZnO bilayer planar heterojunction solar cells, and added different concentration of branched-poly (ethylene mine) (BPEI) in MEH-PPV.…”
Section: Introductionmentioning
confidence: 99%