Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT

Abstract

The impact of an InGaN/GaN superlattice (SL) on AlGaN/GaN high electron mobility transistor characteristics was investigated, and two effects were discovered: one is a substantial improvement in the conduction characteristics as a result of the InGaN/GaN channel layer, while the other is the effect of diffusion suppression relating to impurities or point defects from the carbon-doped layer. The InGaN/GaN SL was used as a channel layer to improve the mobility and concentration of the two-dimensional channel electron gas. It was found that by inserting the InGaN/GaN SL just above a C-doped semi-insulating GaN layer as the InGaN underlayer, the conduction current of the SL with five periods (5SL) was observed to be much higher than that of the conventional material with a GaN channel layer of over 2 μm in thickness. The results demonstrated that this SL layer is effective in suppressing the diffusion of impurities or point defects originating from the carbon-doped layer, resulting in the device performance improvement.

Numerical Study of Temperature and Electric Field Effects on the Total Optical Absorption Coefficient in the Presence of Optical Inter-Conduction-Subband Transitions in InGaN/GaN Single Parabolic Quantum Wells

“…Due to their particular thermodynamic and chemical proprieties, III-nitride semiconductor materials alloys such as InN, GaN, AlN, InGaN have gained much interest and have emerged as a very attracted and promising materials for optoelectronic applications. Their direct band gap make them a great candidate for solar cells, Laser, Photo-detectors and so on [1][2][3][4]. A variety of nanostructure forms such us quantum well (QW), quantum well wire (QWW), quantum dot (QD) and quantum ring (QR) are experimentally manufactured.…”

Ultra‐wide bandgap Al 0. 1 Ga 0 . 9 N double channel HEMT for RF applications

“…L G = 0.8 μm, L GD = 1 μm AlGaN double channel with GaN buffer HEMT exhibited 143.5 V of V BR , 0.473 A/mm of I DS , and 97.9 mS/mm of G m. 18 The InGaN double channel HEMT showed low off‐state leakage current and better I ON /I OFF ratio 19 . The InGaN/GaN periodic structure improved the electron mobility and two‐dimensional electron gas (2DEG) density [ 20 and 21 ]. AlGaN/GaN/InGaN/GaN heterostructure device enhanced the electron confinement in the channel and demonstrated 41% power added efficiency at 2 GHz 22 …”