Effect of interface states on electron transport in 4H-SiC inversion layers

Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond

“…It is important to note that this is true even in devices with the lowest D it so that further defect passivation is projected to increase the mobility from 50 to more than 100 cm 2 /V.s, which cannot be achieved by NO POA alone as nitrogen density becomes saturated. These conclusions are in agreement with separate mobility studies using Hall effect measurements on nitrided samples [13,114,125]. Such experiments also reveal that at higher fields, mobility becomes limited by surface-roughness scattering.…”

Physical and electrical properties of reactive molecular-beam-deposited aluminum nitride in metal-oxide-silicon structures

“…21 Similar results have recently been reported on SiO 2 /4H-SiC capacitors. 24,25 In that case the charging is attributed to interface states ͑border traps͒ in the SiO 2 which are close enough to the SiC conduction band edge to make them electrically active. In AlN ab initio calculations of amorphous AlN show that there is a wide tail in the conduction band 26 and since most of the studied materials are either amorphous or microcrystalline such tailing would be expected in other high-materials.…”

Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

“…11) The core idea of the new characterization method of D it (E) near E C is to focus on the quantitative characterization of the densities of free (mobile) and trapped carriers at SiO 2 =SiC interfaces. [12][13][14][15][16][17][18] The physics governing the trapping of electrons at the interface is included in these two characterized quantities. However, to extract quantitative information on D it (E) from them, a careful examination of the relationship between the applied gate voltage (V g ) and the energy of the traps at the interface (E t ) is required.…”