Effect of interfacial and bulk organic contamination on the quality of thin silicon oxide

Rana, Niraj; Shadman, Farhang

doi:10.1109/tsm.2002.807736

Cited by 11 publications

(8 citation statements)

References 17 publications

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“…They also suggested that organic contamination should be less than 10 ng per 150-mm wafer using unstructured C 8 H 16 as the contaminant. Furthermore, Rana et al [14][15][16] studied the effects of isopropanol ͑IPA͒ and butyl hydroxy toluene ͑BHT͒ on the quality of ultrathin gate oxides by thermal oxidation. They determined that the adsorption capacity and kinetics of polar organic molecules was highly dependent on the surface hydrophobicity ͑HF-last cleaned͒ or hydrophilicity ͑as-received͒, as BHT caused a larger number of carbon-based defects on the HFcleaned wafers.…”

Section: Chronology Of Amcsmentioning

confidence: 99%

Organic Airborne Molecular Contamination in Semiconductor Fabrication Clean Rooms

Den

Bai

Kang

2006

J. Electrochem. Soc.

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Monitoring of airborne molecular contamination ͑AMC͒ has become a crucial element of cleanroom management as the production phase of semiconductor devices marches deep into sub-100-nm range. The current understandings of the AMC, particularly those with organic origins, are presented comprehensively in this article based on the research reports within the past ten years. Starting with a review of the chronological development of AMC problems and several approaches for the AMC classifications, this article also examines the merits of several available ambient sampling and surface analytical methods. The focal point of the article is to address the surface deposition potential of organic AMCs by experimentally correlating the surface speciation and abundance of the organic AMCs with their physical and chemical characteristics, together with the kinetic models delineating the rates of deposition for both single-and multiple-contaminant scenarios. In addition, the current progress of the AMC control strategies, especially the development of the chemical filtration technology, is also examined in the paper.

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Section: Chronology Of Amcsmentioning

confidence: 99%

Organic Airborne Molecular Contamination in Semiconductor Fabrication Clean Rooms

Den

Bai

Kang

2006

J. Electrochem. Soc.

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“…The detrimental impact of some slow diffuser contaminants (molybdenum and tungsten) was also pointed out . Finally, organic contamination is known to degrade the gate oxide integrity (GOI) .…”

Section: Introductionmentioning

confidence: 99%

A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing

Polignano

Codegoni

Grasso

et al. 2015

Phys. Status Solidi A

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A few key techniques for the analysis of contamination in silicon are compared for their ability to detect different impurities. Both metal and organic contamination is included in this study. In addition, common contaminants and elements recently introduced in the fabrication process are considered. For what concerns metal contamination, it is shown that different approaches are required depending on the in‐depth distribution of the contaminant and hence on its diffusivity. Copper, iron, molybdenum, and tellurium are chosen as examples of contaminants with different diffusivity and solubility properties. Total reflection X‐ray fluorescence (TXRF), recombination and generation lifetime measurement techniques, deep level transient spectroscopy (DLTS) and capacitance versus voltage measurements are compared. The detection of slow diffusers is found to be very critical, because a very low dose may result in a non‐negligible concentration in the device region. As a consequence, the sensitivity per unit area required for these elements is difficult to reach with surface techniques such as TXRF. On the other hand, very fast diffusers such as copper can hardly be revealed in the solid solution in silicon. Copper in silicon can be revealed at the oxide–silicon interface by TOF‐SIMS measurements, or by surface generation velocity measurements with the Zerbst method. For what concerns organic contamination, surface recombination velocity and gate oxide integrity tests were compared. The most relevant effects of organic contamination were observed by electrical stress of the oxide. Indeed, the fraction of capacitors with degraded breakdown voltage increased dramatically in wafers with intentional organic contamination.

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“…It has been widely recognized that organic molecules adsorbed on hydrogen-terminated silicon surface form Si-C bond after thermal desorption of surface hydrogen atom and degrade the electrical property of Si device [1,2]. In general, it has been thought that the source of organic contamination is airborne molecular organic materials, and the understanding of influence of the variety of additives in plastic materials such as carrier box and building materials of clean room has been extensively studied mainly using the combined technique of gas chromatography-mass spectrometry (GC-MS) and wafer thermal desorption (WTD) [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

ToF-SIMS analysis of influence of alkylamine compounds in UPW on hydrogen-terminated Si surface

Kobayashi

Owari

2006

e-J. Surf. Sci. Nanotechnol.

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Adsorption behaviors of alkylamine compounds in UPW (ultra pure water) on hydrogen-terminated Si(100) were elucidated mainly by ToF-SIMS. Si wafers cleaned by heat treatment in 500• C were etched in 0.38% HF and soaked in water solution of alkylamine after 1 min UPW rinse. The peak intensity of amine molecular ions and SiH/Si ratio detected by ToF-SIMS are considered to be used as a measure of quantity of adsorbed molecules and surface oxidation, respectively. It was found that hydrophobic amine molecules with longer CH 2 chain tend to be left with high concentration in a very short time of soaking and also tend to have the larger effect on the increase of surface oxidation of hydrogen-terminated surface. The latter phenomenon was explained by an I-effect of alkyl group.

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Effect of interfacial and bulk organic contamination on the quality of thin silicon oxide

Cited by 11 publications

References 17 publications

Organic Airborne Molecular Contamination in Semiconductor Fabrication Clean Rooms

Organic Airborne Molecular Contamination in Semiconductor Fabrication Clean Rooms

A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing

ToF-SIMS analysis of influence of alkylamine compounds in UPW on hydrogen-terminated Si surface

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