Effect of ion mass on the evolution of extended defects during annealing of MeV ion-implanted p-type Si

Abstract

Articles you may be interested inPhotoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon

Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

“…However, the TEM characterization of these three different samples in this study clearly show that for different species with similar damage distribution, the defects formed are different and dislocation loops are preferentially nucleated in samples implanted with higher mass species. 8 The observations related to preferential nucleation of loops for heavier mass species appear to be a direct result of the denser cascades created by implantation of the heavier species consistent with both experimental evidence 19 and MD simulations. 20 Even though the dose in our experiments has been adjusted to minimize differences in average damage distribution, the dense cascades created by the heavier mass species may have introduced some local amorphous regions at the peak of the damage distribution.…”

“…Fatima et al 2,8 have determined the threshold doses corresponding to the transformation from point defects to extended defects in annealed samples. The threshold dose was shown to depend more strongly on the damage production than on the dose of the implant.…”

“…8, the critical dose for Sn implanted samples is between 1ϫ10 13 and 2ϫ10 13 planted with the lower dose of 2ϫ10 13 cm Ϫ2 . The average lengths of the RLDs measured in these two samples, implanted with 2ϫ10 13 and 3ϫ10 13 Sn cm Ϫ2 , were 0.09 and 0.20 m, respectively.…”

“…2,8 Both electrical and structural characterization of Si, Ge, and Sn implanted samples consistently reveal that the formation of extended defects occurs at lower doses for heavier mass species. 8 In this study, we report details of the transmission electron microscopy ͑TEM͒ characterization of the extended defects formed in the various samples studied.…”

Electrically active defects in surface pre-amorphized Si under rapid thermal anneal and their removal by concurrent titanium silicidation

“…Recently there have been several reports on electrically active defects observed in self-ion implanted Si after annealing at temperatures above 500°C. [1][2][3][4] Analyses of the deep level transient spectroscopy ͑DLTS͒ spectra revealed that most of the defect levels observed after post-implantation annealing at temperatures between 500 and 750°C are related to Si self-interstitial clusters. 1 For implant doses of у1ϫ10 13 cm Ϫ2 , the clusters appear to transform between electronic configurations and comparison of the thermal evolution behavior of these defect levels with transmission electron microscopy ͑TEM͒ analyses suggest that the small interstitial clusters are either the precusors of the ͕311͖ defects or that they compete with ͕311͖ defects as sinks for self-interstitials.…”