Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Lai, K. Robert; Paskova, T.; Grenko, J. A.; Johnson, Mark A.; Udwary, K.; Preble, E. A.; Evans, K. R.

doi:10.1016/j.jcrysgro.2010.01.020

Cited by 11 publications

(12 citation statements)

References 15 publications

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“…However, In incorporation in InGaN is also strongly affected by a small miscut of the substrate, which was experimentally reported for c-plane [42,115] and m-plane substrates [116,117]. This is clear evidence that In incorporation is strongly affected by the surface bond arrangement even in the case of a high V/III ratio.…”

Section: Vapor and Surface Reactionssupporting

confidence: 66%

MOCVD of Nitrides

Amano

2015

Handbook of Crystal Growth

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Section: Vapor and Surface Reactionssupporting

confidence: 66%

MOCVD of Nitrides

Amano

2015

Handbook of Crystal Growth

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“…Therefore, we can conclude that the peak shift can be caused by the In concentration difference between the well-faceted and non-faceted samples. It is known that In incorporation efficiencies on different GaN surface planes are different 44 52 53 54 55 . T. Wunder et al reported a 50% higher indium incorporation for {1 01} semipolar facets in comparison to c-plane growth 44 .…”

Section: Resultsmentioning

confidence: 99%

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire

Tanaka

Chen

Jungjohann

et al. 2015

Sci Rep

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Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. We report here detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates and utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO2. We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.

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“…In the case of GaN substrates sliced from a bulk boule, the proper surface preparation before the epitaxy is a real challenge. In addition, it was observed that the substrate misorientation is a key parameter in the growth of good quality epilayers on non-polar GaN substrates [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%