Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

Romanov, I. S.; Prudaev, I. А.; Маrmalyuk, А. А.; Курешов, В. А.; Сабитов, Д. Р.; Мазалов, А. В.

doi:10.1007/s11182-014-0271-1

Cited by 3 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition, the ideality factor and forward currents in the low-injection regime also show a comparable degradation dynamics. According to various literatures, such dependencies suggests diffusion processes to be involved [44], [46], [47], [48], [49], [50], [51]. Hydrogen or Mg-dopant atoms migrate from p-doped layers to the active region resulting in an increase of non-radiative recombination accompanied by parasitic current paths.…”

Section: A Degradation Mechanismsmentioning

confidence: 99%

Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes

et al. 2023

View full text Add to dashboard Cite

We report on the degradation mechanisms and dynamics of silicone encapsulated ultraviolet A (UV-A) high-power light-emitting diodes (LEDs), with a peak wavelength of 365 nm. The stress tests were carried out for a period of 8665 hours with forward currents between 350 mA and 700 mA and junction temperatures up to 132 • C. Depending on stress condition, a significant decrease in optical power could be observed, being accelerated with higher operating conditions. Devices stressed at a case temperature of 55 • C indicate a decrease in radiant flux between 10 -40 % varying with measurement current, whereas samples stressed at higher case temperatures exhibit crack formation in the silicone encapsulant accompanied by electromigration shorting the active region. The analyzed current and temperature dependency of the degradation mechanisms allows to propose a degradation model to determine the device lifetime at different operating parameters. Additional stress test data collected at different aging conditions is used to validate the model's lifetime predictions.

show abstract

Section: A Degradation Mechanismsmentioning

confidence: 99%

Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes

et al. 2023

View full text Add to dashboard Cite

show abstract

Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

2018

View full text Add to dashboard Cite

Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

Renso

Santi

Caria

et al. 2020

Journal of Applied Physics

View full text Add to dashboard Cite

This paper provides insights into the degradation of InGaN-based LEDs by presenting a comprehensive analysis carried out on devices having two quantum wells (QWs) with different emission wavelengths (495 nm and 405 nm). Two different configurations are considered: one with the 495 nm QW closer to the p-side and one with the 495 nm QW closer to the n-side. The original results collected within this work indicate that (i) during stress, the devices show an increase in defect-related leakage both in reverse and low-forward voltage ranges: current increases with the square-root of stress time, indicating the presence of a diffusion process; (ii) stress induces a decrease in the luminescence signal emitted by both quantum wells: the drop in luminescence is stronger when measurements are carried out at low current levels, indicating that degradation is due to the generation of Shockley–Read–Hall recombination centers; (iii) remarkably, the degradation rate is linearly dependent on the luminescence signal emitted before stress by the well, indicating that carrier density impacts on degradation; and (iv) the optical degradation rate has a linear dependence on the stress current density. The results strongly suggest the existence of a recombination-driven degradation process: the possible role of Shockley–Read–Hall and Auger recombination is discussed. The properties of the defects involved in the degradation process are described through steady-state photocapacitance measurements.

show abstract

Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

Cited by 3 publications

References 5 publications

Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes

Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes

Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

Contact Info

Product

Resources

About