Effect of magnetron sputtering parameters on dielectric properties of PTFE foil

Lowkis, B; Ziaja, J.; Klaus, Paulina; Krawczyk, Dominika

doi:10.1109/tdei.2020.008710

Cited by 8 publications

(12 citation statements)

References 5 publications

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“…By further increasing sputtering time, surface roughness quickly dropped to 0.566 nm at 30 min and kept stale around 0.56∼0.61 nm for the films with a sputtering time of 60, 90, and 120 min. Being consistent with the topography in figures 3(a)-(f), the PTFE film deposited uniformly with high quality and low roughness during the preparation process which were also reported for other polymers' films [23,24]. 5(c)-(f) show that the color transition was gentle, indicating the height of the protrusions without any obvious differences.…”

Section: Growth Mode Of Ptfe Filmsupporting

confidence: 88%

Unveiling the growth mode and structure relaxation of Polytetrafluoroethylene film by radio-frequency magnetron sputtering

et al. 2022

Mater. Res. Express

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Relying on radio-frequency (RF) magnetron sputtering, Polytetrafluoroethylene (PTFE) films with a series of thicknesses in the range from 80 to 2000 nm were prepared on silicon substrates. The surface morphology and roughness of the PTFE films were measured by atomic force microscope (AFM) technology at microscale. Results indicated that the PTFE film grew in an island pattern during sputtering, while the surface roughness of PTFE films was almost invariable throughout the sputtering process. Then the structure relaxation of PTFE film annealed at 100℃ for 15-480 mins was investigated. Annealing treatment induced columnar protrusions on the PTFE surface, which was due to the flow and rearrangement of molecules. During annealing duration, the columnar structures could continuously rearrange and decompose, and therefore lowering film thickness from 2000 to 1110 nm with increasing annealing time. Due to molecule flow and redistribution of the annealed film, the columnar structures were formed on the surface, which resulted in the higher roughness. Finally, the effects of film thickness and annealing time on the hydrophobicity were also studied.

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Section: Growth Mode Of Ptfe Filmsupporting

confidence: 88%

Unveiling the growth mode and structure relaxation of Polytetrafluoroethylene film by radio-frequency magnetron sputtering

et al. 2022

Mater. Res. Express

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“…The erosion of the dielectric strength and increased leakage current upon the incorporation of PTFE at 30 W were interpreted to be a result of the low dielectric strength (∼0.24 MV/cm) of PTFE. 40 In addition, the dielectric properties of the HfO x and PPH-hybrid dielectrics were assessed, as shown in Figure 1c. The HfO xand PPH-hybrid-dielectric-based MIM capacitors were measured in the frequency range of 20−10 6 Hz using an oscillating voltage of 45 mV and a bias voltage of −3 V. The dielectric constant of the HfO x film was calculated to be 16.29 at 1 MHz on the basis of capacitance measurements.…”

Section: Resultsmentioning

confidence: 99%

“…As summarized in Table 1, the dielectric constant decreased as the RF power of PTFE increased and was approximately the same over a range of operating frequencies (20−10 6 Hz), as expected because of the low dielectric constant (∼2.01) and low dielectric loss of PTFE (∼1 × 10 −4 at 800 MHz). 40,41 In addition, Figure S2 shows the J−E curves and dielectric constant profile of the PTFE-dielectric-based MIM capacitors. As a result, a high leakage current density of 7.89 × 10 −6 A/cm 2 at 0.1 MV/cm and lower dielectric strength of 0.24 MV/cm breakdown electric field were observed.…”

Section: Resultsmentioning

confidence: 99%

“…Note that the leakage current density, dielectric strength, and dielectric constant of PTFE obtained here were in agreement with the literature values in previous research. 40,41 Next, to evaluate the practical applications of the HfO x and PPH-hybrid as gate dielectrics for TFTs, bottom-gate, topcontact TFTs were implemented by depositing an IGZO semiconductor as a channel layer on the gate dielectric, as shown in Figure 2a. Figure 2b−e depicts the transfer characteristics and hysteresis phenomena of IGZO TFTs with the HfO x and PPH-hybrid gate dielectrics.…”

Section: Resultsmentioning

confidence: 99%

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Mechanically Durable Organic/High-k Inorganic Hybrid Gate Dielectrics Enabled by Plasma-Polymerization of PTFE for Flexible Electronics

Kim

Jung

Min

et al. 2022

ACS Appl. Mater. Interfaces

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To achieve both the synergistic advantages of outstanding flexibility in organic dielectrics and remarkable dielectric/insulating properties in inorganic dielectrics, a plasma-polymerized hafnium oxide (HfO x ) hybrid (PPH-hybrid) dielectric is proposed. Using a radio-frequency magnetron cosputtering process, the high-k HfO x dielectric is plasma-polymerized with polytetrafluoroethylene (PTFE), which is a flexible, thermally stable, and hydrophobic fluoropolymer dielectric. The PPH-hybrid dielectric with a high dielectric constant of 14.17 exhibits excellent flexibility, maintaining a leakage current density of ∼10–8 A/cm2 even after repetitive bending stress (up to 10000 bending cycles with a radius of 2 mm), whereas the HfO x dielectric degrades to be leaky. To evaluate its practical applicability to flexible thin-film transistors (TFTs), the PPH-hybrid dielectric is applied to amorphous indium–gallium–zinc oxide (IGZO) TFTs as a gate dielectric. Consequently, the PPH-hybrid dielectric-based IGZO TFTs exhibit stable electrical performance under the same harsh bending cycles: a field-effect mobility of 16.99 cm2/(V s), an on/off current ratio of 1.15 × 108, a subthreshold swing of 0.35 V/dec, and a threshold voltage of 0.96 V (averaged in nine devices). Moreover, the PPH-hybrid dielectric-based IGZO TFTs exhibit a reduced I–V hysteresis and an enhanced positive bias stress stability, with the threshold voltage shift decreasing from 4.99 to 1.74 V, due to fluorine incorporation. These results demonstrate that PTFE improves both the mechanical durability and electrical stability, indicating that the PPH-hybrid dielectric is a promising candidate for high-performance and low-power flexible electronics.

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“…The development of electrochemical textile sensors takes advantage of the recent progress in fiber and textile electronics [ 21 ] to produce conductive fabrics and yarns that will compose the device. A thin conductive film is usually deposited on commercial textiles by screen-printing [ 20 , 22 ], dip coating [ 23 , 24 ], spinning [ 25 , 26 ], electrochemical deposition [ 27 ], oxidative ink-jet printing [ 28 ], in-situ polymerization [ 29 , 30 ], physical vapor deposition [ 31 ] and magnetron sputtering [ 32 ]. The mainly employed conductive species are nanomaterials based on metals and carbon, and conductive polymers.…”

Section: Introductionmentioning

confidence: 99%

Textile Chemical Sensors Based on Conductive Polymers for the Analysis of Sweat

et al. 2021

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Wearable textile chemical sensors are promising devices due to the potential applications in medicine, sports activities and occupational safety and health. Reaching the maturity required for commercialization is a technology challenge that mainly involves material science because these sensors should be adapted to flexible and light-weight substrates to preserve the comfort of the wearer. Conductive polymers (CPs) are a fascinating solution to meet this demand, as they exhibit the mechanical properties of polymers, with an electrical conductivity typical of semiconductors. Moreover, their biocompatibility makes them promising candidates for effectively interfacing the human body. In particular, sweat analysis is very attractive to wearable technologies as perspiration is a naturally occurring process and sweat can be sampled non-invasively and continuously over time. This review discusses the role of CPs in the development of textile electrochemical sensors specifically designed for real-time sweat monitoring and the main challenges related to this topic.

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Effect of magnetron sputtering parameters on dielectric properties of PTFE foil

Cited by 8 publications

References 5 publications

Unveiling the growth mode and structure relaxation of Polytetrafluoroethylene film by radio-frequency magnetron sputtering

Unveiling the growth mode and structure relaxation of Polytetrafluoroethylene film by radio-frequency magnetron sputtering

Mechanically Durable Organic/High-k Inorganic Hybrid Gate Dielectrics Enabled by Plasma-Polymerization of PTFE for Flexible Electronics

Textile Chemical Sensors Based on Conductive Polymers for the Analysis of Sweat

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