“…Thus, the reduction in the band gap energy, with respect to the corresponding host non-nitride alloys, ranges from 105 to 250 meV/ % N in various dilute nitride III-V systems. 2,3,6,8,15,18,22,23 It may be noted that, in comparison to other III-As based N alloys, the redshift in the emission wavelength is greater in Sb or mixed Sb-As based system. A similar conclusion has been drawn by Harmand et al 24 where they report the reductions of 127, 124, and 151 meV% N contributions due only to N in the annealed GaAsN, InGaAsN, and GaAsSbN systems, respectively, relative to GaAs after carefully excluding the strain effects.…”