Effect of nitrogen incorporation in CNx thin films deposited by RF magnetron sputtering

Effect of N2/CH4 flow ratio on microstructure and composition of hydrogenated carbon nitride films prepared by a dual DC-RF plasma system

“…One reason could be due to the prolonged exposure of the sample to the laboratory environment. The strong increase of N/C at a low content of N 2 in the gas mixture seems to be mainly due to the incorporation of nitrogen species coming from the plasma on the film surface during deposition [26]. Similar results have been reported for material grown in FCVA system [27] and Electron Cyclotron Wave Resonance [28].…”

Study on amorphous carbon nitride film prepared by facing target sputtering

“…1 (a), black circle) increases from 4.3 nm/min, in a pure Ar discharge, to the maximum value of 6.9 nm/min in a discharge with an N 2 /Ar gas ratio of 40%. This variation of the deposition rate vs. the N 2 /Ar gas ratio has already been observed in reactive magnetron sputtering [23,24]. The increase in the deposition rate may be due to the promoted formation of C-N radicals at target surface (i.e.…”

Optical properties of amorphous carbon nitride films with high nitrogen content

“…The roughness of the surface usually increases with the discharge pressure. The same phenomenon has been observed in a-CN x films [18]. We also found that absorption below 1.6 eV decreased with an increase in the pressure ratio P 1 while maintaining the total discharge pressure, as shown in Fig.…”