Effect of Oxygen Concentration on Characteristics of Ba(Zr_0.1Ti_0.9)O₃Thin Films Deposited on Indium Tin Oxide/Glass Substrates

Abstract

In this study, the perovskite Ba(Zr 0:1 Ti 0:9 )O 3 (BZ1T9) ferroelectric thin films deposited on indium tin oxide (ITO)/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The optimal sputtering conditions of as-deposited BZ1T9 thin films are an rf power of 160 W, a chamber pressure of 10 mTorr, a substrate temperature of 580 C, and an oxygen concentration of 40%. The effect of oxygen concentration on the physical and electrical characteristics of BZ1T9 thin films is determined. For different oxygen concentrations, the thickness and deposition rate are calculated by scanning electron microscopy (SEM). From polarization versus electrical field curves, the 2P r value and coercive field of BZ1T9 thin films are determined to be 7 mC/cm 2 and 250 kV/cm, respectively. In addition, the maximum dielectric constant, leakage current density, and transmittance within the ultraviolet-visible (UV-vis) spectrum are investigated. #

Nonvolatile transparent manganese oxide thin film resistance random access memory devices

“…This result was attributed to the defects and oxygen vacancies in as-deposited manganese oxide thin films on ITO substrates. 7,28) Figure 8 shows the typical I-V characteristics of the CTA-treated manganese oxide RRAM device with positive bias, with ln I on the vertical axis and ln V on the horizontal axis. The CTAtreated manganese oxide thin films also exhibited ohmic conduction for 0.1 to 3 V. In addition, the smaller number of oxygen defects and vacancies in the CTA-treated manganese oxide thin films of the RRAM devices was proved by the ln I-V 1/2 curve.…”

The Influence of Vanadium Doping on the Physical and Electrical Properties of Non-Volatile Random Access Memory Using the BTV, BLTV, and BNTV Oxide Thin Films

“…However, the (111) peaks of BZ1T9 thin films were not observed for (400) and (440) ITO substrates. Therefore, we determined that the crystallinity and deposition rate of BZ1T9 thin films on ITO substrates differed from those in these study [24][25][26][27].…”

“…The XRD patterns of BZ1T9 thin films with 40% oxygen concentration on Pt/Ti/SiO 2 /Si substrates from our previous study were shown in Fig. 1 [24][25]. The (111) and (011) peaks of the BZ1T9 thin films on Pt/Ti/SiO 2 /Si substrates were compared with those on ITO substrates.…”

Electrical and Physical Characteristics of Vanadium-Doped Bi4Ti3O12Ferroelectric Thin Films after Rapid Thermal Annealing

“…The as-deposited films annealed by the rapid temperature annealing (RTA) processing would be reported extensively. Many studies had been reported that rapid temperature annealing method was successfully to increase the electrical and physical properties [7][8][9].…”