Nonvolatile transparent manganese oxide thin film resistance random access memory devices

Abstract

In this study, the electrical conduction and bipolar switching properties in transparent manganese oxide thin films were investigated and discussed. The as-deposited manganese oxide thin films were prepared by the rf magnetron sputtering method with the rf power of 130 W, chamber pressure of 10 mTorr, substrate temperature of 550 °C, and different oxygen concentrations. To discuss the resistive switching properties of the manganese oxide thin films, the conventional thermal annealing treatment of the manganese oxide thin film resistive random access memory (RRAM) devices were investigated. Finally, the current-voltage characteristics were determined by the ohmic contact and the Poole-Frankel emission conduction method in low/high-voltage regions, respectively.

Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment

“…1 b , the In 1+ 3d 5/2 peaks of ITO electrode that shifted two valences to In 3+ 3d 5/2 effect was caused and improved by oxidation ability and binding energy of SCF treatment. The oxidation ability and repaired damaged effect of ITO electrode of Gd:SiO 2 RRAM devices improved by SCF treatment process were found [ 15 – 17 ].…”

“…Among these memory devices, various metals doped into silicon-based oxide thin films are widely and considerably discussed for the resistive random access memory (RRAM) devices because of its great compatibility in integrated circuit (IC) processes, high operation speed, long retention time, and low operation voltage [ 9 – 13 ]. Recently, the transparent ITO electrode of the various memory devices are widely discussed and investigated because of its compatibility and integrated in system on panel concept applications [ 14 – 17 ]. The high thermal budget and fabrication cost of rapid temperature annealing (RTA) and conventional furnace annealing (CFA) post-treatment methods were widely used for applications in dielectric thin films reformed and passivated the defects [ 15 – 18 ].…”

Ag Nanoparticle-Decorated WO3 Nanowires for Nonvolatile Memory

“…Their potential use in the fabrication of data storage as well as memory devices is ascribed to the higher electric field generated in the confined geometrical structure . Transition-metal oxide (TMO) nanostructures, such as MnO 2 , TiO 2 , WO 3 , NiO, Nb 2 O 5 , and so forth, have been studied extensively as candidate materials for NVM devices on account of the flexible stoichiometry, excellent resistive switching ability, accredited endurance, low production cost, easy control of the chemical composition, and complementary metal oxide semiconductor-compatible process. Among TMO materials, WO 3 NWs provide remarkable physical and electrical properties, for instance, a high work function (5.1–6.4 eV) which offers high trapped density of electrons and chemical stability with Si atom.…”

Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method

“…However, the high fabrication temperature, long process time, high pollution reaction, and thermal budget effect were serious consideration problems for integrated circuits (IC) process. To traps and oxygen vacancy efficiently decreased and passivated, no damaging diffusion effect into thin film, the excellent properties of liquid-like supercritical carbon dioxide fluid treatment (SCF) method on physical and electrical properties of thin films resistive random access memory (RRAM) devices were widely attracted considerable method [ 1 , 2 , 3 , 4 , 5 ].…”

“…The static random access memory (SRAM), dynamic random access memory (DRAM), ferroelectric random access memory (FeRAM), magnetron memory (MRAM), and phrase change memory (PCM) devices were studied and were used for applications in various portable electrical devices [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 ]. However, the different oxide thin film RRAM devices were widely investigated and discussed because of its non-volatility, long retention cycles, high storage capacity, low power consumption, and high speed readout characteristics [ 10 , 11 , 12 , 13 , 14 ].…”