Effect of Oxygen on Diamond Crystallization in Metal–Carbon Systems

Palyanov, Yuri N.; Borzdov, Yuri M.; Kupriyanov, Igor N.; Bataleva, Yuliya V.; Nechaev, Denis V.

doi:10.1021/acsomega.0c02130

Cited by 14 publications

(5 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Regarding the first observation, a possible explanation might be found in the process of diamond crystallization in metal-carbon systems. Palyanov et al recently reported that oxygen can greatly affect the crystallization ( Palyanov et al, 2020 ). They found that the concentration of O 2 higher than 0.25 wt% can lead to spontaneous nucleation events which hinders crystal growth.…”

Section: Resultsmentioning

confidence: 99%

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

et al. 2022

View full text Add to dashboard Cite

High-performance electronics would greatly benefit from a versatile III-V integration process on silicon. Unfortunately, integration using hetero epitaxy is hampered by polarity, lattice, and thermal expansion mismatch. This work proposes an alternative concept of III-V integration combining advantages of pulse electrodeposition, template-assisted selective epitaxy, and recrystallization from a melt. Efficient electrodeposition of nano-crystalline and stochiometric InSb in planar templates on Si (001) is achieved. The InSb deposits are analysed by high resolution scanning transmission electron microscopy (HR-STEM) and energy-dispersive X-ray spectroscopy (EDX) before and after melting and recrystallization. The results show that InSb can crystallise epitaxially on Si with the formation of stacking faults. Furthermore, X-ray photoelectron (XPS) and Auger electron (AE) spectroscopy analysis indicate that the InSb crystal size is limited by the impurity concentration resulting from the electrodeposition process.

show abstract

Section: Resultsmentioning

confidence: 99%

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Hasil EDAX tersebut memperlihatkan perbandingan persentase komposisi kimia material pembentuk, yaitu unsur In=18,29% dan unsur Se=81,71% atau 2 : 9 padahal perbandingan bahan yang diinginkan adalah 2 : 3. Hal ini dimungkinkan karena adanya unsur lain yang muncul pada saat preparasi seperti unsur O. Selain itu pada saat proses pengelasan untuk membentuk kapsul kemungkinan oksigen masih dapat masuk ke dalam tabung sangat besar, sebab pada proses pengelasan ini meskipun telah dilakukan dengan sangat hati-hati, sangat sulit dilakukan dan memerlukan waktu yang lama sehingga pada daerah pengelasan (tabung pyrex) dapat terjadi lubang yang berukuran kecil (pori), melalui pori tersebut udara dari luar terutama bahan untuk mengelas (oksigen) dapat masuk dengan mudah, karena pada saat pengelasan tabung masih dalam kondisi divakum dengan tingkat kevakuman yang tinggi [17].…”

Section: Analisis Komposisi Kimia Ingot Atau Massif In2se3unclassified

Karakteristik Struktur Kristal In2Se3 Hasil Preparasi Dengan Metode Bridgman

Ulikaryani¹,

Sodikin²,

Laksana³

et al. 2023

infotekmesin

View full text Add to dashboard Cite

Apart from using silicon material, thin-layer solar cells can be made from various types of semiconductor materials, such as a combination of groups III and VI. In solar cell applications, these materials are usually used as n-type coatings. This study not only aimed to determine the crystal structure and the effect of annealing temperature on the crystal lattice parameters but also to determine the chemical composition and surface morphological structure of the crystals formed from the preparation. The crystal growth process was carried out using the Bridgman method with different heating patterns. The temperature in both annealing temperatures is 200oC and 250oC. The physical properties of the prepared In2Se3 crystals were characterized using XRD, SEM, and EDAX. XRD Characterization was used to determine the crystal structure, while SEM and EDAX characterization was used to determine the surface morphology and chemical composition of the crystals. The result of the XRD characterization showed that the formed In2Se3 crystals were polycrystals with a hexagonal structure. Based on the diffractogram obtained, the In2Se3 crystalline heating 1 has better quality. EDAX analysis showed that the In2Se3 crystals were composed of elements of In and Se with a mole ratio of 2:9, while the SEM characterization showed that the color of the surface morphology of the In2Se3 crystals was not homogeneous.

show abstract

“…Existing ideas about the polygenic origin of diamonds in nature (see reviews [3,4,26]) involve various processes, mechanisms, and driving forces for diamond crystallization in nature [3,4,26,40,50,51]. According to classical models [3,4,15], in the lithospheric mantle diamond formation occurs at depths of 120-210 km and temperatures of 900-1500 • C as a result of metasomatic processes.…”

Section: Natural Processes and Mechanisms Of Diamond Formationmentioning

confidence: 99%

Diamond Formation via Carbonate or CO2 Reduction under Pressures and Temperatures of the Lithospheric Mantle: Review of Experimental Data

Bataleva

Palyanov

2023

Minerals

Self Cite

View full text Add to dashboard Cite

Existing ideas about the polygenic origin of diamonds in nature involve various processes, mechanisms, and driving forces for diamond crystallization, including redox reactions, changes in P-T conditions, evolution of melt or fluid composition, and others. According to classical models, in the lithospheric mantle, diamond formation occurs at depths of 120–210 km and temperatures of 900–1500 °C as a result of metasomatic processes. The driving forces in these models are considered to be redox reactions leading to the reduction of carbonates, carbonate melts, or CO2 to elemental carbon. In this study, we provide a review and systematization, as well as experimental issues and possible future directions of experimental studies, on diamond crystallization from carbonate carbon through redox reactions at P,T (pressure, temperature) conditions relevant to the lithospheric mantle. These studies have demonstrated that silicon, metals (FeSi, Fe, Fe-Nialloys), carbides (SiC, Fe3C, Fe7C3), reduced components of C-O-H fluid, sulfides/sulfide melts, Fe-S-C melts, and the application of an electric field (potential difference) can act as reducing agents for carbonate/carbonate-bearing melts or CO2 fluid, leading to the formation of diamond and graphite. The experimental data reviewed in this paper not only indicate the fundamental possibility of diamond formation from carbonate carbon through the reduction of carbonate, carbonate-bearing phases, or CO2 in the mantle, but also reveal the characteristic features of the resulting diamonds. Furthermore, the significance of potential reducing agents (fluid, sulfide, silicon, metal, and carbide) in various geodynamic settings, including the lithospheric mantle at depths insufficient for stabilizing iron or carbides, has been identified.

show abstract

Effect of Oxygen on Diamond Crystallization in Metal–Carbon Systems

Cited by 14 publications

References 41 publications

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon

Karakteristik Struktur Kristal In2Se3 Hasil Preparasi Dengan Metode Bridgman

Diamond Formation via Carbonate or CO2 Reduction under Pressures and Temperatures of the Lithospheric Mantle: Review of Experimental Data

Contact Info

Product

Resources

About