Effect of Oxygen Plasma Treatment on Characteristics of TiO$_{2}$ Photodetectors

Shih, Wei-Shun; Young, Sheng-Joue; Ji, Liang‐Wen; Water, Willem van de; Meen, Teen-­Hang; Shiu, Huei-Wen

doi:10.1109/jsen.2011.2150212

Cited by 17 publications

(10 citation statements)

References 28 publications

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“…Free carriers promoted to the conduction band behave approximately as delocalized electrons in an infinite walled three dimensional box. The high density states provide continuum of electronic excitation which lead to an increase in background carrier concentration [19], [20]. Fig.…”

Section: Resultsmentioning

confidence: 99%

High-Efficient Ultraviolet Photodetectors Based on TiO₂/Ag/TiO₂ Multilayer Films

Hsiao

Young

et al. 2015

IEEE Sensors J.

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In this paper, the TiO 2 /Ag/TiO 2 (TAT) multilayer thin films were deposited on a corning glass substrate at room temperature using radio frequency magnetron sputtering technique. The TAT multilayer was characterized by field-emission scanning microscope, atomic force microscopy, X-ray diffraction, and ultraviolet (UV)-visible spectroscopy. The TAT multilayer can be optimized to obtain a transmittance more than 80%. With a 360-nm illumination and 5 V applied bias, it was found that the fabricated UV photodetectors (PDs) with TAT structure showed much higher photoresponse (10 A/W) than traditional TiO 2 metal-semiconductor-metal PDs (0.08 A/W). This indicated that the TAT multilayer structures have potential to be employed in the PD devices of high performance.

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Section: Resultsmentioning

confidence: 99%

High-Efficient Ultraviolet Photodetectors Based on TiO₂/Ag/TiO₂ Multilayer Films

Hsiao

Young

et al. 2015

IEEE Sensors J.

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“…This result indicates that the dark current and photocurrent would be restrained by an amorphous morphology, thus affecting the entire response. As shown in Table 2, the responsivity (R) of a PD is defined as follows [24,25]:…”

Section: 53mentioning

confidence: 99%

Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

Lam

Young

Chu

et al. 2021

Journal of Nanomaterials

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In this study, metal–semiconductor–metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.

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“…Most common sensors are NDIR sensors and metal oxide sensors; however, IR sensors have disadvantages such as bulkiness of transducers and high power consumption during operation [ 7 , 8 , 9 , 10 ]. Metal oxide gas sensors typically work at temperatures higher than 200 °C, which increases the difficulty of manufacturing and requires high power consumption [ 11 , 12 , 13 ]. In contrast, polymer-based sensors do not share these disadvantages.…”

Section: Introductionmentioning

confidence: 99%

PEI-Functionalized Carbon Nanotube Thin Film Sensor for CO2 Gas Detection at Room Temperature

et al. 2021

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In this study, a polyethyleneimine (PEI)-functionalized carbon nanotube (CNT) sensor was fabricated for carbon dioxide detection at room temperature. Uniform CNT thin films prepared using a filtration method were used as resistive networks. PEI, which contains amino groups, can effectively react with CO2 gas by forming carbamates at room temperatures. The morphology of the sensor was observed, and the properties were analyzed by scanning electron microscope (SEM), Raman spectroscopy, and fourier transform infrared (FT-IR) spectroscopy. When exposed to CO2 gas, the fabricated sensor exhibited better sensitivity than the pristine CNT sensor at room temperature. Both the repeatability and selectivity of the sensor were studied.

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Effect of Oxygen Plasma Treatment on Characteristics of TiO$_{2}$ Photodetectors

Cited by 17 publications

References 28 publications

High-Efficient Ultraviolet Photodetectors Based on TiO₂/Ag/TiO₂ Multilayer Films

High-Efficient Ultraviolet Photodetectors Based on TiO₂/Ag/TiO₂ Multilayer Films

Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

PEI-Functionalized Carbon Nanotube Thin Film Sensor for CO2 Gas Detection at Room Temperature

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Effect of Oxygen Plasma Treatment on Characteristics of TiO$_{2}$ Photodetectors

Cited by 17 publications

References 28 publications

High-Efficient Ultraviolet Photodetectors Based on TiO2/Ag/TiO2 Multilayer Films

High-Efficient Ultraviolet Photodetectors Based on TiO2/Ag/TiO2 Multilayer Films

Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

PEI-Functionalized Carbon Nanotube Thin Film Sensor for CO2 Gas Detection at Room Temperature

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Product

Resources

About

High-Efficient Ultraviolet Photodetectors Based on TiO₂/Ag/TiO₂ Multilayer Films

High-Efficient Ultraviolet Photodetectors Based on TiO₂/Ag/TiO₂ Multilayer Films