Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes

Abstract

The treatment effect of the oxygen plasma on the performance of recessed AlGaN/GaN Schottky barrier diodes has been investigated. After the oxygen plasma treatment, the turn-on voltage and reverse leakage current are slightly changed, while the current collapse could be effectively mitigated. The X-ray photoelectron spectroscopy results suggest that a thin surface oxide layer is formed by the oxygen plasma treatment, which is responsible for the reduced current collapse. In addition, the device with oxygen plasma treatment has a relatively more inhomogeneous barrier height.

Electrical Characteristics of Thermally Stable Ag–Pd–Cu Alloy Schottky Contacts on n-Al0.6Ga0.4N

“…Additionally, for LEE enhancement, the use of either thin dielectric layers composed of high-index materials or thick dielectric layers composed of low-index materials has been proposed. Furthermore, Mao et al 20 enhanced the electrical properties of recessed AlGaN/GaN Schottky barrier diodes by subjecting them to oxygen plasma treatment, followed by annealing at 450 °C. The oxygen plasma treatment reduced the surface trap density and mitigated the reverse leakage current and current collapse by forming a thin oxide layer in the Schottky junction region.…”