Effect of PECVD of SiO2 passivation layers on GaN and InGaP

Baik, Kwang Hyeon; Park, P.Y.; Luo, B.; Lee, K.P.; Shin, Jae-Ho; Abernathy, C. R.; Hobson, W. S.; Pearton, S. J.; Ren, F.

doi:10.1016/s0038-1101(01)00205-2

Cited by 7 publications

(2 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Among the many manufacturing methods, SiO 2 thin film passivation has been proposed. 4,5) SiO 2 is receiving attention as a passivation material because of its absorption factor for moisture and gas being lower than other metallic oxides. Also, SiO 2 is a chemically and physically stable material.…”

Section: Introductionmentioning

confidence: 99%

Preparation of SiO₂ Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

Hong¹,

Kim²,

Kim³

2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

To improve the organic light-emitting diode (OLED) lifetime, we prepared a SiO2 thin film for OLED passivation using a facing target sputtering (FTS) system as a function of oxygen gas flow rate and working pressure. The properties of the SiO2 thin film were examined by Fourier transform infrared (FT-IR), photoluminescence (PL) intensity measurement, field emission scanning electron microscopy (FE-SEM), and ultraviolet–visible (UV–vis) spectrometry that As a result, we found that a SiO2 thin film is formed at a 2 sccm oxygen gas flow rate and results the minimum damage to the organic layer is observed at a 1 mTorr working pressure. Also, from the water vapor transmission rate (WVTR), we observed that all of the as-deposited SiO2 thin films showed the ability of blocking moisture. After the properties were evaluated, an optimized SiO2 thin film was applied to OLED passivation. As a result, the property of the OLED fabricated by SiO2 passivation is similar to the OLED fabricated by glass passivation. However, the performance of OLED was degraded by enhancing of SiO2 passivation. This is the organic layer of the device is exposed to plasma for a prolonged period. Therefore, a method of minimizing damage to the organic layer and optimum conditions for what are important.

show abstract

Section: Introductionmentioning

confidence: 99%

Preparation of SiO₂ Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

Hong¹,

Kim²,

Kim³

2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…[19][20][21] Previously, Luo et al 20 reported on changes in the electrical properties of n-GaN Schottky rectifiers by varying the chamber pressure, RF chuck power, and SiH 4 /NH 3 ratio of the PECVD process. After passivation, the rise in sheet carrier concentration was attributed to the stress induced by the dielectric film.…”

Section: Introductionmentioning

confidence: 99%

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

Tan

Houston

Hill

et al. 2004

Journal of Elec Materi

View full text Add to dashboard Cite

The influence of dielectric stress on the direct current (DC) electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) has been investigated. Dual-frequency plasma deposition was used to vary the amount of stress induced by a passivating dielectric on the surface of the devices. Initial data suggested a strong influence from the induced dielectric stress, but the low-frequency, radio-frequency (RF) excitation of the plasma deposition process was found to induce a severe nonreversible damage to the exposed AlGaN surface through N ion bombardment. The consequence is a drastic reduction of the sheet carrier concentration and mobility of the twodimensional electron gas (2DEG). Subsequently, an alternative damage-free technique using a helium precursor was used to obtain compressive films. Based on the results, uniform dielectric stress has a minimal impact on the polarization charges within the AlGaN barrier.

show abstract

PECVD oxide as intermediate film for wafer bonding: Impact of residual stress

Olbrechts¹,

Raskin²

2010

Microelectronic Engineering

View full text Add to dashboard Cite

Effect of PECVD of SiO2 passivation layers on GaN and InGaP

Cited by 7 publications

References 22 publications

Preparation of SiO₂ Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

Preparation of SiO₂ Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

PECVD oxide as intermediate film for wafer bonding: Impact of residual stress

Contact Info

Product

Resources

About

Effect of PECVD of SiO2 passivation layers on GaN and InGaP

Cited by 7 publications

References 22 publications

Preparation of SiO2 Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

Preparation of SiO2 Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

Influence of dual-frequency plasma-enhanced chemical-vapor deposition Si3N4 passivation on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors

PECVD oxide as intermediate film for wafer bonding: Impact of residual stress

Contact Info

Product

Resources

About

Preparation of SiO₂ Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

Preparation of SiO₂ Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time