Gallium and aluminum co-doped ZnO (GAZO) thin films were deposited on glass substrate by using a facing targets sputtering system under various oxygen atmosphere, and the effect of oxygen on their structural, optical and electrical properties was investigated. All as-deposited GAZO thin films under oxygen atmosphere exhibited smooth surface and the lowest value of root-mean-square was 0.6 nm at oxygen 1 sccm, this value is lower than that of film deposited at pure argon atmosphere. The (0 0 2) peak intensity was increased with increase in oxygen flow rate, the peak maximized at oxygen 1 sccm. All films indicated high transmittance above 85% in the visible range and the lowest resistivity of 8.9 × 10 −4 • cm was obtained at pure argon atmosphere.

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To improve the organic light-emitting diode (OLED) lifetime, we prepared a SiO2 thin film for OLED passivation using a facing target sputtering (FTS) system as a function of oxygen gas flow rate and working pressure. The properties of the SiO2 thin film were examined by Fourier transform infrared (FT-IR), photoluminescence (PL) intensity measurement, field emission scanning electron microscopy (FE-SEM), and ultraviolet–visible (UV–vis) spectrometry that As a result, we found that a SiO2 thin film is formed at a 2 sccm oxygen gas flow rate and results the minimum damage to the organic layer is observed at a 1 mTorr working pressure. Also, from the water vapor transmission rate (WVTR), we observed that all of the as-deposited SiO2 thin films showed the ability of blocking moisture. After the properties were evaluated, an optimized SiO2 thin film was applied to OLED passivation. As a result, the property of the OLED fabricated by SiO2 passivation is similar to the OLED fabricated by glass passivation. However, the performance of OLED was degraded by enhancing of SiO2 passivation. This is the organic layer of the device is exposed to plasma for a prolonged period. Therefore, a method of minimizing damage to the organic layer and optimum conditions for what are important.

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ZnO films were deposited using a spin-spray method with the source solution containing zinc nitrate and an oxidizing solution containing trisodium citrate onto glass substrates under various pH conditions. A ZnO film with a columnar structure was obtained at pH higher than 7.0, while no ZnO film was formed at a mixed solution pH of 6.7. The transparent and conductive ZnO film obtained from a mixed solution with pH 10.7 exhibited the lowest resistivity of 9.9 9 10 À3 X cm with a high transmittance above 90%.