Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system

Hong, Jeong Soo; Matsushita, Nobuhiro; Kim, Kyung Hwan

doi:10.1088/0268-1242/29/7/075007

Cited by 15 publications

(12 citation statements)

References 36 publications

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“…Hydrogen microwave plasma annealing can increase the carrier concentration and mobility of GAZO films resulting from producing the shallow hydrogen donors and removing the oxygen adsorbed on the surface of grains similar to reports on AZO films [ 17 - 19 ]. The lowest electrical resistivity of GAZO films reported recently is from 2.18 × 10 −4 to 1.186 × 10 −3 Ω-cm [ 10 - 14 ]. The electrical resistivity of the hydrogen microwave plasma-annealed GAZO films reported in this work is 4.7 × 10 −4 Ω-cm, which is relatively low compared with the lowest electrical resistivity of GAZO films reported recently.…”

Section: Resultsmentioning

confidence: 99%

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Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Chang

2014

Nanoscale Res Lett

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Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films.

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Section: Resultsmentioning

confidence: 99%

“…Gallium and aluminum co-doped zinc oxide (GAZO) films were fabricated these years. Different deposition methods to produce GAZO films such as pulsed laser deposition, co-sputtering, and facing targets sputtering were reported [ 10 - 14 ]. GAZO films were expected to possess the advantages of both GZO and AZO films.…”

Section: Introductionmentioning

confidence: 99%

Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Chang

2014

Nanoscale Res Lett

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“…In the case of application in electronic devices, ZnO film depositedb yavacuum process, such as sputtering, is widely used as at ransparent electrode and channel layer owing to high crystallinity, transparency,a nd electrical conductivity. [3][4][5] However,i tr equires high-cost vacuum equipment, and thus, many researchers are focusing on solutionp rocessing as an alternative fabrication method. ZnO film fabricated by solution processing has various kinds of surface morphologies, such as plates, nanobelts, nanorings, and nanocombs.…”

Section: Introductionmentioning

confidence: 99%

Influence of Surface Morphology and Conductivity on Photocatalytic Performance of Solution‐Processed Zinc Oxide Film

Hong

Matsushita

Shirai

et al. 2017

Chemistry An Asian Journal

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Solution-processed ZnO films with various structures have been fabricated and the influence of surface morphology and conductivity on photocatalytic performance, including improvement of conductivity, hydrogen production, and photodegradation of rhodamine B, has been investigated. Surface morphology was controlled by solution conditions, and as-fabricated films had rod, dense, and flower-like structures. Improved conductivity was revealed by the photocatalytic activity of ZnO, the influence of surface morphology on the photodegradation of rhodamine B, and the relationship with conductivity and hydrogen production.

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“…Transparent conductive oxides (TCO) are widely used in fabricating transparent electrodes of solar cells, touch panel displays, organic light emitting devices, and transparent thin films transistors [1,2]. Tin doped indium oxide (ITO) is the commonly used materials of TCO nowadays due to its excellent electrical and optical properties.…”

Section: Introductionmentioning

confidence: 99%

“…Gallium and aluminum codoped zinc oxide (GAZO) films were fabricated and expected to obtain the benefits of both AZO and GZO films. The GAZO films have been prepared by several deposition methods such as pulsed laser deposition, cosputtering, and facing targets sputtering [2,10,[13][14][15]. Inline sputtering technique is widely used in mass-production system for large-sized substrates.…”

Section: Introductionmentioning

confidence: 99%

In-Line Sputtered Gallium and Aluminum Codoped Zinc Oxide Films for Organic Solar Cells

Chang

2014

International Journal of Photoenergy

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Gallium and aluminum codoped zinc oxide (GAZO) films were deposited at different temperatures by in-line sputtering. Aluminum is thermally unstable compared to other elements in GAZO films. The grains of GAZO films increase with deposition temperature. Coalescence between grains was observed for GAZO films deposited at 250°C. The deposition temperature exhibits positive influence on crystallinity, and electrical and optical properties of GAZO films. The carrier concentration and mobility of GAZO films increase, while the electrical resistivity of GAZO films decreases with deposition temperature. The average optical transmittance of GAZO films rises with deposition temperature. In-line sputtering demonstrates a potential method with simplicity, mass production, and large-area deposition to produce GAZO films with good electrical and optical quality. The electrical resistivity of 4.3×10−4 Ω cm and the average optical transmittance in the visible range from 400 to 800 nm of 92% can be obtained for GAZO films deposited at 250°C. The hybrid organic solar cells (OSC) were fabricated on GAZO-coated glass substrates. Blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) were the photoactive materials in OSC. The power conversion efficiency of OSC is 0.65% for the OSC with the 250°C deposited GAZO electrode.

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Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system

Cited by 15 publications

References 36 publications

Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Influence of Surface Morphology and Conductivity on Photocatalytic Performance of Solution‐Processed Zinc Oxide Film

In-Line Sputtered Gallium and Aluminum Codoped Zinc Oxide Films for Organic Solar Cells

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