Preparation of In<sub>2</sub>O<sub>3</sub>-ZnO (IZO) Thin Film on Glass Substrate for Organic Light Emitting Device (OLED)

Hong, Jeong Soo; Kim, Sang Mo; Park, Sang Joon; Choi, Hyung-Wook; Kim, Kyung Hwan

doi:10.1080/15421401003608287

Cited by 17 publications

(8 citation statements)

References 8 publications

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“…Both MLs feature a slight roughness, and the root-mean-squared values are 0.486 nm for N × [ n -IZO 4 nm /μ-IZO 2 nm ] and 0.509 nm for N × [ n -IZO 2 nm /μ-IZO 2 nm ]. Thus, the microscope studies confirm the improved surface smoothness of the MLs, characteristic for amorphous IZO thin-film materials deposited at low substrate temperatures [ 25 , 36 ].…”

Section: Resultsmentioning

confidence: 76%

“…That can be attributed to the well-known Burstein–Moss shift due to the higher concentration n in both types of MLs compared to that in the homogeneous μ-IZO film [ 37 ]. The direct bandgap optical absorption model closely describes the absorption edge of amorphous IZO, as well as several other amorphous and crystalline TCOs [ 36 , 38 , 39 ]. The values of E g were obtained by extrapolating the linear part of the plots of (α h ν) 2 vs. h ν to the zero absorption level (α = 0), as shown in Figure 5 b.…”

Section: Resultsmentioning

confidence: 99%

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Transparent Conducting Amorphous IZO Thin Films: An Approach to Improve the Transparent Electrode Quality

et al. 2023

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It is common knowledge that using different oxygen contents in the working gas during sputtering deposition results in fabrication of indium zinc oxide (IZO) films with a wide range of optoelectronic properties. It is also important that high deposition temperature is not required to achieve excellent transparent electrode quality in the IZO films. Modulation of the oxygen content in the working gas during RF sputtering of IZO ceramic targets was used to deposit IZO-based multilayers in which the ultrathin IZO unit layers with high electron mobility (μ-IZO) alternate with ones characterized by high concentration of free electrons (n-IZO). As a result of optimizing the thicknesses of each type of unit layer, low-temperature 400 nm thick IZO multilayers with excellent transparent electrode quality, indicated by the low sheet resistance (R ≤ 8 Ω/sq.) with high transmittance in the visible range (T¯ > 83%) and a very flat multilayer surface, were obtained.

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Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Transparent Conducting Amorphous IZO Thin Films: An Approach to Improve the Transparent Electrode Quality

et al. 2023

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“…Therefore, we used the Ag 2 O layer as a p-type semiconductor in our study. Ag 2 O and Ag films were deposited by facing target sputtering (FTS) systems, which enable the fabrication of high-quality thin films through a high ionization rate with less damage to the substrate from the plasma. − Ag 2 O films were deposited by reactive sputtering of O 2 gas with Ag, and the thickness of the Ag film varied from 40 to 10 nm by controlling the sputtering time. A p–n junction photodetector with Ag 2 O/β-Ga 2 O 3 was constructed by depositing the Ag 2 O/Ag layer on β-Ga 2 O 3 through one-time sputtering without opening the chamber.…”

Section: Introductionmentioning

confidence: 99%

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Park

et al. 2022

ACS Appl. Mater. Interfaces

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Self-powered deep-ultraviolet photodetectors have received considerable attention in recent years because of their efficiency, reliability, and various applications in civilian and military fields. Herein, a Ag/Ag 2 O layer is continuously deposited on a β-Ga 2 O 3 epitaxial layer by a facing target sputtering system without opening the chamber, which has an advantage in time and cost. A p−n junction photodetector was constructed through the Ag 2 O/β-Ga 2 O 3 heterojunction and by varying the thickness of the Ag film, which was controlled by the sputtering time. The effect of top electrode thickness on the photoresponse characteristics of photodetectors was studied. Because thin Ag films have low surface roughness, indicating low optical loss and good interfacial conditions, photodetectors using a thin Ag film as the top electrode exhibit high photoresponsivity. However, Ag films that were thinner than the threshold thickness, which is the minimum thickness required to form a continuous, homogeneous surface film, exhibited rather low performance owing to the high reflection and scattering caused by the inhomogeneous surface morphology. The as-fabricated photodetector with a 20 nm Ag film presents a high on/off ratio of 3.43 × 10 8 , responsivity and detectivity of 25.65 mA/W and 6.10 × 10 11 Jones, respectively, and comparable rise and decay times of 108 and 80 ms, respectively. Additionally, even after three months of storage in an ambient environment, the photoresponse of the photodetector was maintained, indicating good stability in air. These results suggest that Ag 2 O/β-Ga 2 O 3 heterojunction-based photodetectors with thin Ag films can be used in various applications requiring deep-ultraviolet detection without an external power supply. KEYWORDS: deep ultraviolet (DUV), photodetector, self-powered, Ag film thickness, Ag 2 O/β-Ga 2 O 3 , p−n junction

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“…Transparent electrode is a fundamental and essential part for the electronic devices such as transparent thin film transistors (TTFT), solar cells, organic light emitting devices (OLEDs), and touch panel displays [1][2][3][4][5]. It is one of the determinants of efficiency, and importance of transparent electrode materials is growing.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system

Hong

Matsushita

Kim

2014

Semicond. Sci. Technol.

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Gallium and aluminum co-doped ZnO (GAZO) thin films were deposited on glass substrate by using a facing targets sputtering system under various oxygen atmosphere, and the effect of oxygen on their structural, optical and electrical properties was investigated. All as-deposited GAZO thin films under oxygen atmosphere exhibited smooth surface and the lowest value of root-mean-square was 0.6 nm at oxygen 1 sccm, this value is lower than that of film deposited at pure argon atmosphere. The (0 0 2) peak intensity was increased with increase in oxygen flow rate, the peak maximized at oxygen 1 sccm. All films indicated high transmittance above 85% in the visible range and the lowest resistivity of 8.9 × 10 −4 • cm was obtained at pure argon atmosphere.

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Preparation of In₂O₃-ZnO (IZO) Thin Film on Glass Substrate for Organic Light Emitting Device (OLED)

Cited by 17 publications

References 8 publications

Transparent Conducting Amorphous IZO Thin Films: An Approach to Improve the Transparent Electrode Quality

Transparent Conducting Amorphous IZO Thin Films: An Approach to Improve the Transparent Electrode Quality

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system

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Preparation of In2O3-ZnO (IZO) Thin Film on Glass Substrate for Organic Light Emitting Device (OLED)

Cited by 17 publications

References 8 publications

Transparent Conducting Amorphous IZO Thin Films: An Approach to Improve the Transparent Electrode Quality

Transparent Conducting Amorphous IZO Thin Films: An Approach to Improve the Transparent Electrode Quality

Ag2O/β-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system

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Preparation of In₂O₃-ZnO (IZO) Thin Film on Glass Substrate for Organic Light Emitting Device (OLED)

Ag₂O/β-Ga₂O₃ Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability