“…Up to now, several techniques have been employed to increase H k of the films, including post-annealing of the film in a magnetic field [7,8], changing the sputtering oblique angle [9][10][11], depositing multilayers [12,13], doping transition metals [14,15], composition modification [16,17] and so on. Nevertheless, post-annealing may affect other components of the whole circuit, and the thickness and interface in the multilayer films are not easy to be precisely controlled.…”