2000
DOI: 10.1109/20.908846
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Effect of post-annealing on ultra-high frequency properties of amorphous Fe-Co-B thin films

Abstract: In this paper, FeCoB amorphous thin films were deposited on glass substrates using a triode sputtering source under a uniform applied magnetic field. The as-deposited films exhibit a low coercivity of 1.7 Oe, a high anisotropy field of 37 Oe and 4 17.5 kG, when sputtered with a bias voltage of 180 V. The large anisotropy fields and saturations in these films result in a ferromagnetic resonance frequency as high as 2.63 GHz, a relative permeability of 400-500 and a low dissipation of 10-30 in the frequency rang… Show more

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Cited by 6 publications
(3 citation statements)
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“…FeCrTaN [1], [2] and amorphous FeCoB [3] films have recently been shown to have excellent soft magnetic properties. The real and imaginary parts of permeability for FeCrTaN were found to be about 340 and 30, respectively, up to 1 GHz and the FMR frequency was about 3 GHz.…”
Section: Introductionmentioning
confidence: 99%
“…FeCrTaN [1], [2] and amorphous FeCoB [3] films have recently been shown to have excellent soft magnetic properties. The real and imaginary parts of permeability for FeCrTaN were found to be about 340 and 30, respectively, up to 1 GHz and the FMR frequency was about 3 GHz.…”
Section: Introductionmentioning
confidence: 99%
“…Up to now, several techniques have been employed to increase H k of the films, including post-annealing of the film in a magnetic field [7,8], changing the sputtering oblique angle [9][10][11], depositing multilayers [12,13], doping transition metals [14,15], composition modification [16,17] and so on. Nevertheless, post-annealing may affect other components of the whole circuit, and the thickness and interface in the multilayer films are not easy to be precisely controlled.…”
Section: Introductionmentioning
confidence: 99%
“…9 Chen et al adopted a magnetic field annealing method to induce the H k of FeCoB films. 10 In this article, we are taking a different approach to regulate H k of the magnetic films, that is, deposit Fe 50 Ni 50 /Teflon composite films under electric field (EF) in high energetic cluster deposition chamber. The results indicate that EF assisted deposition is a very effective technique to induce the H k and modify MWA performance in our samples.…”
Section: Introductionmentioning
confidence: 99%