Effect of pre-implanted oxygen in Si on the retention of implanted He

Manuaba, A.; Pászti, F.; Ramos, A.R.; Pécz, B.; Zolnai, Zsolt; Tunyogi, A.; Szilágyi, E.

doi:10.1016/j.nimb.2006.03.102

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…This finding demonstrates that SiOC does not retain implanted He above the p-BS detection limit and allows He to outgas rapidly. Consistent with previous studies 26 , 27 , our findings also confirm lack of He retention in the a-SiO 2 oxide layer beneath the deposited SiOC. Since He escapes from a-SiO 2 , the He observed after room temperature implantation in samples with no SiOC layer is due to retention within the pure Si underlying the surface oxide.…”

Section: Resultssupporting

confidence: 93%

Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Ding

Price

et al. 2018

Sci Rep

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Damage caused by implanted helium (He) is a major concern for material performance in future nuclear reactors. We use a combination of experiments and modeling to demonstrate that amorphous silicon oxycarbide (SiOC) is immune to He-induced damage. By contrast with other solids, where implanted He becomes immobilized in nanometer-scale precipitates, He in SiOC remains in solution and outgasses from the material via atomic-scale diffusion without damaging its free surfaces. Furthermore, the behavior of He in SiOC is not sensitive to the exact concentration of carbon and hydrogen in this material, indicating that the composition of SiOC may be tuned to optimize other properties without compromising resistance to implanted He.

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Section: Resultssupporting

confidence: 93%

Rapid and damage-free outgassing of implanted helium from amorphous silicon oxycarbide

Ding

Price

et al. 2018

Sci Rep

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“…He bubbles do not form in the silica due to the high mobility of He in silica which enables it to diffuse out of the layer. 8,15 Note that we estimate using SRIM (Ref. 11) (but neglecting any diffusive loss of the gas) that, at the highest fluences, the silicon layers may contain up to 26 at.…”

Section: A Bubble Formationmentioning

confidence: 99%

“…The use of a layered specimen in the present work enables us to make a direct measurement of (linear) swelling in the poly-Si layer whilst simultaneously monitoring the He bubble morphology. Although our tri-layer geometry is similar to that used by Manuaba et al 8 to study He ion implantation into silica with different stoichiometries, the irradiation direction in the present work is parallel to the layer interfaces (rather than perpendicular) and results in an identical fluence to each layer. It should also be noted that the conclusions of Manuaba et al agree with those of Szakács et al 9 that bubbles do not form in silica due to the high mobility of He in that material.…”

Section: Introductionmentioning

confidence: 99%

Helium irradiation effects in polycrystalline Si, silica, and single crystal Si

Abrams

Hinks

Pawley

et al. 2012

Journal of Applied Physics

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Enhanced radiation tolerance in nitride multilayered nanofilms with small period-thicknesses Appl. Phys. Lett. 101, 153117 (2012) Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO3 thin films J. Appl. Phys. 112, 073718 (2012) Kinetics of color center formation in silica irradiated with swift heavy ions: Thresholding and formation efficiency Appl. Phys. Lett. 101, 154103 (2012) Fabricating high-density magnetic storage elements by low-dose ion beam irradiation Appl. Phys. Lett. 101, 112406 (2012) Determination of ion track radii in amorphous matrices via formation of nano-clusters by ion-beam irradiation Appl. Phys. Lett. 101, 103112 (2012) Additional information on J. Appl. Phys. Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin (%55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiationinduced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stressrelated viscoelastic flow being the dominant mechanisms of dimensional change. V C 2012 American Institute of Physics. [http://dx

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