Effect of precursor flow rate on physical and mechanical properties of a-C:H:SiO<sub> <i>x</i> </sub> films deposited by PACVD method

Grenadyorov, A. S.; Оскомов, К. В.; Kovsharov, N. F.; Solovyev, A. A.

doi:10.1088/1742-6596/1115/4/042046

Cited by 4 publications

(3 citation statements)

References 17 publications

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“…Our results are in good agreement with those obtained by Hilbert et al [ 41 ], who report on the presence of short-range order atomic clusters in the a-C:H:SiO x coating with the DLC structure. Carbon sp 3 hybridization occurs in these clusters.…”

Section: Resultssupporting

confidence: 93%

“…Carbon sp 3 hybridization occurs in these clusters. Based on the length of C–Si and C–C bonds ( Figure 3 ) and the distribution of sp 3 hybridized bonds in C–H–Si–O molecules [ 41 ], it is possible to identify the formation of the atomic short-range order in the synthesized a-C:H:SiO x coating, which is also present in the DLC structure with the dominant nonpolar and polar covalent bonds C–C and Si–C(O), respectively. TEM results are consistent with the Fourier transform infrared analysis obtained in our previous research [ 42 ], and confirm the presence of C–C, Si–O, Si–C, and C–O bonds in the coating.…”

Section: Resultsmentioning

confidence: 99%

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Endothelial Cell Behavior and Nitric Oxide Production on a-C:H:SiOx-Coated Ti-6Al-4V Substrate

Хлусов

Grenadyorov

Solovyev

et al. 2023

IJMS

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This paper focuses on the surface modification of the Ti-6Al-4V alloy substrate via a-C:H:SiOx coating deposition. Research results concern the a-C:H:SiOx coating structure, investigated using transmission electron microscopy and in vitro endothelization to study the coating. Based on the analysis of the atomic radial distribution function, a model is proposed for the atomic short-range order structure of the a-C:H:SiOx coating, and chemical bonds (C–O, C–C, Si–C, Si–O, and Si–Si) are identified. It is shown that the a-C:H:SiOx coating does not possess prolonged cytotoxicity in relation to EA.hy926 endothelial cells. In vitro investigations showed that the adhesion, cell number, and nitric oxide production by EA.hy926 endothelial cells on the a-C:H:SiOx-coated Ti-6Al-4V substrate are significantly lower than those on the uncoated surface. The findings suggest that the a-C:H:SiOx coating can reduce the risk of endothelial cell hyperproliferation on implants and medical devices, including mechanical prosthetic heart valves, endovascular stents, and mechanical circulatory support devices.

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Endothelial Cell Behavior and Nitric Oxide Production on a-C:H:SiOx-Coated Ti-6Al-4V Substrate

Хлусов

Grenadyorov

Solovyev

et al. 2023

IJMS

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“…Твердость (H) пленок, содержащих кремний, при этом снижается до 10−20 GPa вследствие снижения доли s p 3 гибридизированных атомов углерода. Свойства алмазоподобных пленок, легированных кремнием или SiO x , зависят как от содержания легирующей добавки [13][14][15], так и условий осаждения, таких, как амплитуда импульсов напряжения смещения подложки [16,17], состав и расход прекурсора [17,18], плотность ионного тока на подложку [19].…”

Section: Introductionunclassified

Влияние Толщины Гидрогенизированных Углеродных Пленок, Легированных Кремнием И Кислородом, На Свойства Их Поверхности

Гренадёров¹,

Соловьев²,

Оскомов³

2021

Журнал Технической Физики

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In this work, 0.5-7 µm thick a-C:H:SiOx films were obtained on silicon and VT6 ti-tanium alloy substrates in plasma of non-self-sustained arc discharge with a hot cathode using a bipolar pulsed substrate bias voltage. The dependence of hardness, internal stress-es, surface morphology, wettability, and the surface potential a-C:H:SiOx films on the thickness was studied. It is shown that increasing the film's thickness enhances the allow-able load on the material and its hardness. The a-C:H:SiOx films had low internal stresses (less than 600 MPa), and the contact angle with water was 75–80°. It is found that an in-crease in the film thickness leads to a rise in the negative surface potential from 50 to 670 mV.

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Effect of the plasma confinement on properties of a-C:H:SiOx films grown by plasma enhanced chemical vapor deposition

Grenadyorov

Solovyev

Оскомов

et al. 2019

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The properties of SiOx doped amorphous hydrogenated carbon (a-C:H:SiOx) films greatly depend on the deposition parameters, in particular, on the ion bombardment intensity during the film growth. In this work, a magnetic field created by an external magnetic coil was used for plasma confinement and control of the ion bombardment during the process of plasma enhanced chemical vapor deposition of a-C:H:SiOx films. The structure, surface morphology, and mechanical properties of the obtained films were studied using Raman spectroscopy, atomic force microscopy, and nanoindentation, respectively. This work shows that the increase in the magnetic field allows better confinement of the plasma and increased the density of the ion current on the substrate. It is shown that there is an optimal value of the magnetic field at which films with the best mechanical characteristics are formed. Higher magnetic field values lead to excessive heating of the substrate by the bombarded ions and graphitization of the film carbon matrix. Under optimum conditions, deposition of an a-C:H:SiOx film on an AISI 321 stainless steel substrate allowed increasing the hardness and plasticity index of its surface twice and its plastic deformation resistance by nine times. At the same time, the wear rate and the friction coefficient decreased by 25 and 5.5 times, respectively.

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Effect of precursor flow rate on physical and mechanical properties of a-C:H:SiO_x films deposited by PACVD method

Cited by 4 publications

References 17 publications

Endothelial Cell Behavior and Nitric Oxide Production on a-C:H:SiOx-Coated Ti-6Al-4V Substrate

Endothelial Cell Behavior and Nitric Oxide Production on a-C:H:SiOx-Coated Ti-6Al-4V Substrate

Влияние Толщины Гидрогенизированных Углеродных Пленок, Легированных Кремнием И Кислородом, На Свойства Их Поверхности

Effect of the plasma confinement on properties of a-C:H:SiOx films grown by plasma enhanced chemical vapor deposition

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Effect of precursor flow rate on physical and mechanical properties of a-C:H:SiO x films deposited by PACVD method

Cited by 4 publications

References 17 publications

Endothelial Cell Behavior and Nitric Oxide Production on a-C:H:SiOx-Coated Ti-6Al-4V Substrate

Endothelial Cell Behavior and Nitric Oxide Production on a-C:H:SiOx-Coated Ti-6Al-4V Substrate

Влияние Толщины Гидрогенизированных Углеродных Пленок, Легированных Кремнием И Кислородом, На Свойства Их Поверхности

Effect of the plasma confinement on properties of a-C:H:SiOx films grown by plasma enhanced chemical vapor deposition

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Effect of precursor flow rate on physical and mechanical properties of a-C:H:SiO_x films deposited by PACVD method