Effect of Pressure on the Energy Levels of Impurities in Semiconductors. III. Gold in Germanium

Holland, M. G.; Paul, William

doi:10.1103/physrev.128.43

Cited by 28 publications

(31 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Au value corresponds to known data [5]. The relative changes of the Hall mobility m H /m H0 in dependence on hydrostatic pressure in n-Ge [6] and Ge:Au 2- (Fig.…”

supporting

confidence: 60%

Hall Mobility and Interband Scattering of Electrons in the Vicinity of Different-Valley Crossing L1 ? ?1 in Ge with Doubly-Charged Impurity of Gold

Daunov

Kamilov

Gabibov

et al. 2001

phys. stat. sol. (b)

View full text Add to dashboard Cite

“…Au value corresponds to known data [5]. The relative changes of the Hall mobility m H /m H0 in dependence on hydrostatic pressure in n-Ge [6] and Ge:Au 2- (Fig.…”

supporting

confidence: 60%

Hall Mobility and Interband Scattering of Electrons in the Vicinity of Different-Valley Crossing L1 ? ?1 in Ge with Doubly-Charged Impurity of Gold

Daunov

Kamilov

Gabibov

et al. 2001

phys. stat. sol. (b)

View full text Add to dashboard Cite

“…For Au impurities, we consider a substitutional Au (see sites in Figure 1b) because this defect gives rise to acceptor levels whereas only a donor level appears for an interstitial Au in bulk Si and Ge. 23,24,30 In Ge/Si NWs, due to the valence band offset (VBO) between Ge and Si at the heterostructure interface, the Ge core serves as a confinement potential for hole carriers, when the Fermi level lies below the valence band maximum (VBM) of the Ge core. Figure 2 shows the band structure of where F nk (r) is the radial charge density averaged over the angular and axial directions, and n and k denote the band index and k-point, respectively.…”

mentioning

confidence: 99%

Defects Responsible for the Hole Gas in Ge/Si Core−Shell Nanowires

et al. 2009

View full text Add to dashboard Cite

The origin of the ballistic hole gas recently observed in Ge/Si core-shell nanowires has not been clearly resolved yet, although it is thought to be the result of the band offset at the radial interface. Here we perform spin-polarized density-functional calculations to investigate the defect levels of surface dangling bonds and Au impurities in the Si shell. Without any doping strategy, we find that Si dangling bond and substitutional Au defects behave as charge traps, generating hole carriers in the Ge core, while their defect levels are very deep in one-component Si nanowires. The defect levels lie to within 10 meV from or below the valence band edge for nanowires with diameters larger than 33 A and the Ge fractions above 30%. As carriers are spatially separated from charge traps, scattering is greatly suppressed, leading to the ballistic conduction, in good agreement with experiments.

show abstract

“…Data on the pressure coefficients ∂(ε C -ε i )/∂P for levels of gold and copper in Ge given in [4,17] show a decrease, i.e. moving away from the edge of the valence band.…”

Section: Results and Discussion P-insb With A Concentration Of Holes mentioning

confidence: 99%

“…In our recent studies [1 -3] and also in studies by other authors on pressure coefficients in Ge:Au [1,2,4], III-V [5 -9], IV-VI [10], and II-IV-V 2 [11,12] with deep impurity centers, it has been postulated that the energies of deep heavily localized impurity states are independent of hydrostatic pressure. This hypothesis was based on an analysis of experimental results.…”

Section: Introductionmentioning

confidence: 92%

Hydrostatic pressure coefficients of the valence band maximum in Ge, InSb, InAs, and GaAs

Daunov

Kamilov

Gabibov

et al. 2003

Physica Status Solidi (b)

View full text Add to dashboard Cite

The Hall coefficient R and specific resistance ρ have been measured in p-InSb : C r, with a hole concentration of about 10 12 cm -3 at T = 77 K, as a function of pressure up to P = 1.5 GPa at T = 77 and 300 K. The deep acceptor level is found to be located at the distance ε A2 = 0.11 eV from the top of the valence band. The pressure coefficient of the valence band maximum ∂ε V /∂P was determined relative to the vacuum in semiconductors Ge, InSb, InAs, and GaAs.

show abstract

Effect of Pressure on the Energy Levels of Impurities in Semiconductors. III. Gold in Germanium

Cited by 28 publications

References 12 publications

Hall Mobility and Interband Scattering of Electrons in the Vicinity of Different-Valley Crossing L1 ? ?1 in Ge with Doubly-Charged Impurity of Gold

Hall Mobility and Interband Scattering of Electrons in the Vicinity of Different-Valley Crossing L1 ? ?1 in Ge with Doubly-Charged Impurity of Gold

Defects Responsible for the Hole Gas in Ge/Si Core−Shell Nanowires

Hydrostatic pressure coefficients of the valence band maximum in Ge, InSb, InAs, and GaAs

Contact Info

Product

Resources

About