Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures

Abderrahmane, Abdelkader; Shoji, K.; Tahara, Taimu; Sato, Shin-ichiro; Ohshima, Takeshi; Okada, Hiroshi; Sandhu, Adarsh

doi:10.1088/1742-6596/433/1/012011

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…Compared with Si-and GaAs-based devices, the better radiation resistance of AlGaN/GaN HEMTs has been proven theoretically [7,8]. However, during the growth process of the epitaxial layers, the lattice mismatch and thermal mismatch between the epitaxial layers induce a high density of defects [9,10].…”

Section: Introductionmentioning

confidence: 99%

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs

Yang

et al. 2023

Electronics

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AlGaN/GaN high-electron-mobility transistors (HEMTs) with two different gate–drain distances (30 μm and 10 μm) were exposed to 1 MeV, 0.6 MeV, and 0.4 MeV protons at a fluence of 2.16 × 1012 cm−2. The gate–channel electron density and low-field mobility were obtained by measuring the capacitance–voltage characteristics and current–voltage characteristics. After proton irradiation, the gate–channel low-field electron mobility of the AlGaN/GaN HEMT with a 30 μm gate–drain distance increases and that with a 10 μm gate–drain distance decreases. It is studied and found that the mobility behavior is related to the polarization Coulomb field scattering, and the proton irradiation influences the intensity of the polarization Coulomb field scattering by changing the polarization/strain distribution in the barrier layer. The different gate–drain distances correspond to different variation trends of scattering intensity. The effect of 1 MeV protons on the barrier layer is smaller compared with 0.6 MeV and 0.4 MeV protons, so the mobility variation is smaller.

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Section: Introductionmentioning

confidence: 99%

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs

Yang

et al. 2023

Electronics

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Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons

Abderrahmane

Tashiro

Takahashi

et al. 2014

Applied Physics Letters

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The effect of annealing on the magnetoelectrical properties of proton-irradiated micro-Hall sensors at an energy of 380 keV and very high proton fluences was studied. Recovery of the electron mobility and a decrease in the sheet resistance of the annealed micro-Hall sensors, as well as an enhancement in their magnetic sensitivity were reported. Trap removal and an improvement in the crystal quality by removing defects were confirmed through current–voltage measurements and Raman spectroscopy, respectively.

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Large negative magnetoresistance induced by interplay between smooth disorder and antidots in AlGaN/GaN HEMT structures

Mishra

Sharma

Tyagi

et al. 2016

Mater. Res. Express

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Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures

Cited by 5 publications

References 13 publications

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs

Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs

Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons

Large negative magnetoresistance induced by interplay between smooth disorder and antidots in AlGaN/GaN HEMT structures

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