Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy

Effect of gamma-ray irradiation on structural properties of GaAsN films grown by metal organic vapor phase epitaxy

“…This deviation from the selection rules was due to a breakdown in the long-range order of the zinc-blende crystal related to the distortion of the alloy lattice. As the N content was increased to 5.1 at%, it was found that the N-LVM was moved to a higher wave number, confirming that the N content was increased [26]. Moreover, the signals of the TO 1 and LO 1 phonon modes broadened with increasing N content, as shown in the inset in Fig.…”

Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys

“…In Ref. [13], they reveal that the nitrogen profile broadening is controlled by the kick-out reaction proceeding in the direction of I As consumes. This mechanism will be further evaluated with the help of the XPS results later.…”

“…For example, Tansu's group reported extremely low threshold edge-emitting lasers and high-performance MBE deposition-grown InGaAsN quantum well lasers in the 1.3 mm range [9][10][11] and Bank et al presented low-threshold MBE grown CW GaInNAsSb/GaAs laser at 1.49 mm [12]. However, incorporation of N into Ga(In)As deteriorates the crystal quality [13]. Post-growth treatments, such as rapid thermal annealing (RTA), can be used to activate the diffusion of N in GaAs host and eliminate the defects induced during the incorporation so as to improve the optical and structure properties of the structure.…”

“…In addition, thermal annealing of as-grown GaInNAs films prepared by using plasma-assisted molecular beam epitaxy (MBE) has demonstrated a dramatic in content-dependent improvement in their optical properties [7,17,18]. Liu et al reported [13] that post-growth RTA with annealing temperature T ann 4 700 1C effectively changes the N configurations in MBE grown GaAsN alloys from interstitial N-N complex to substitutional N As , resulting in the vertical lattice shrink. But Govindaraju et al suggested that a low thermal-energy anneal is responsible for the recovery of the plasma-related crystal damage and excess thermal energy leads to desorption of arsenic from surface and degradation of optical properties [19].…”

Effects of rapid thermal annealing on the properties of GaNxAs1−x

“…Incorporation of N into Ga͑In͒As, however, deteriorates the crystal quality because of the enormous miscibility gap in this material system. [14][15][16][17]19 The effects of RTA process on GaNAs films have been extensively studied, [14][15][16][17][18][19][20] while little is known about its effects on the valence-band splitting in GaNAs layers grown on GaAs substrates. 1, 9,12 Because the GaNAs layer is under biaxial tensile strain in the growth plane, the topmost valence band is light holelike ͑LH͒ and the lower band is heavy holelike ͑HH͒.…”