Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization

Uma, M.; Reddy, V. Rajagopal; Janardhanam, V.; Choi, Chel‐Jong

doi:10.1007/s10854-019-02224-w

Cited by 12 publications

(2 citation statements)

References 45 publications

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“…The plateau at reverse bias provides insight into R sh , whereas the plateau at forward voltage represents the value of R s . [ 81 ] Notice that V GS applied to the EGVFET resulted in a slight difference between the forward I–V curves, and consequently, R s is weakly changed, evidenced in the zoom presented in the inset of Figure 3c. On the other hand, the parallel contribution is drastically modified upon increasing V GS .…”

Section: Resultsmentioning

confidence: 99%

Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

Vieira,

Nogueira,

Merces

et al. 2024

Adv Elect Materials

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Proposals for new architectures that shorten the length of the transistor channel without the need for high‐end techniques are the focus of very recent breakthrough research. Although vertical and electrolyte‐gate transistors are previously developed separately, recent advances have introduced electrolytes into vertical transistors, resulting in electrolyte‐gated vertical field‐effect transistors (EGVFETs), which feature lower power consumption and higher capacitance. Here, EGVFETs are employed to study the charge transport mechanism of spray‐pyrolyzed zinc oxide (ZnO) films to develop a new photosensitive switch concept. The EGVFET's diode cell revealed a current‐voltage relationship arising from space‐charge‐limited current (SCLC), whereas its capacitor cell provided the field‐effect role in charge accumulation in the device's source perforations. The findings elucidate how the field effect causes a continuous shift in SCLC regimes, impacting the switching dynamics of the transistor. It is found ultraviolet light may mimic the field effect, i.e., a pioneering demonstration of current switching as a function of irradiance in an EGVFET. The research provides valuable insights into the charge transport characterization of spray‐pyrolyzed ZnO‐based transistors, paving the way for future nano‐ and optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

Vieira,

Nogueira,

Merces

et al. 2024

Adv Elect Materials

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show abstract

“…Rare earth materials are most frequently employed for MIS-type SBDs because of their broad bandgap and high k-dielectric characteristics. In order to separate the electrical characteristics and current transport methods, some researchers have developed rare-earth-based MIS SBDs [3][4][5][6][7][8]. Also, rare earth ions that have been doped with lanthanum phosphate mostly depend on physical factors such as growth mechanisms, particle size, shape, and dopant percentage [9].…”

Section: Introductionmentioning

confidence: 99%

Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Mariappan

Priya

Bakkiyaraj

et al. 2023

Preprint

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The Cu/Sn-LaPO4/n-Si MIS Schottky barrier diode (SBD) with a 10% Sn doping has been successfully fabricated, and their photodiode properties were investigated. The I-V forward and reverse bias curves determine the photodiode parameters such as barrier height, ideality factor, and saturation currents from the thermionic emission theory. The results of the experiments with 10% Sn-LaPO4 SBDs showed a linear decrease in the ideality factor (n) up to 2.31 and 1.74, respectively, with a small increase in the effective barrier height (𝛟B) of 0.744 and 0.806 eV in dark and light conditions these results signify their use in optoelectronic industries.

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Poly-β-cyclodextrin strengthen Pr6O11 porous oxidase mimic for dual-channel visual recognition of bioactive cysteine and Fe2+

Sun,

Chen,

et al. 2024

Anal Bioanal Chem

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Effect of rare-earth Pr6O11 insulating layer on the electrical properties of Au/n-GaN Schottky electrode and its chemical and structural characterization

Cited by 12 publications

References 45 publications

Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

Electrolyte‐Gated Vertical Transistor Charge Transport Enables Photo‐Switching

Heterojunction structure for high electrical performance of Cu/Sn-LaPO 4 /n-Si type Schottky barrier diode

Poly-β-cyclodextrin strengthen Pr6O11 porous oxidase mimic for dual-channel visual recognition of bioactive cysteine and Fe2+

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