Effect of reactor pressure on catalyst composition and growth of GaSb nanowires

Weng, Xiaojun; Burke, Robert A.; Dickey, Elizabeth C.; Redwing, Joan M.

doi:10.1016/j.jcrysgro.2009.11.035

Cited by 21 publications

(16 citation statements)

References 17 publications

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“…24 Also, the alloying of Au with Sb is consistent with previous reports on GaSb NWs. 25,26 Detailed TEM analysis showed that the GaAs x Sb 1Àx region is single crystalline while the Ga-rich GaAs cap is amorphous. Thus, the increasing-diameter of the GaAs x Sb 1Àx region is due to the increase of NP volume, caused by Au alloying with Sb and Ga, during the shell growth process.…”

Section: Methodsmentioning

confidence: 99%

Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells

Salehzadeh

Kavanagh

Watkins

2013

Journal of Applied Physics

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We report on the growth of GaSb shells on Au-catalyzed GaAs or GaP nanowires (NWs) using metalorganic vapor phase epitaxy. The large lattice mismatch between GaSb and GaAs (GaP), 7.8% (11.8%), results in surface roughening and GaSb island formation via the Stranski-Krastanov (S-K) growth mode. Based on transmission electron microscopy (TEM) analysis, coherent GaSb islands on GaAs NWs could be grown up to a thickness of 1.8 nm for a core diameter of 34 ± 5 nm. For greater shell thickness of 9 ± 3 nm, equal axial and radial strain relaxation occurred increasing from 74% ± 3% for GaAs/GaSb NWs and 91% ± 2% for GaP/GaSb NWs to 100% with increasing core diameter from 15 ± 2 nm to 55 ± 3 nm. Axial strain is relieved by periodic misfit dislocations with edge components parallel to the growth direction. Tangential relaxation is presumed to occur partially by roughening via the S-K growth mode but dislocations with edge components perpendicular to the growth direction were not detected. Raman scattering measurements were performed on ensembles of NWs and the absolute residual strain in the core and shell were determined from the shift of the zone-center phonon modes. Raman results were consistent with the TEM analysis. It was found that the residual strain is higher in GaAs/GaSb NWs (7.3%) compared to GaP/GaSb NWs (1.7%).

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Section: Methodsmentioning

confidence: 99%

Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells

Salehzadeh

Kavanagh

Watkins

2013

Journal of Applied Physics

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“…The results from the temperature and V/III studies will be discussed here, while the pressure study has been reported elsewhere. 13 To examine the effect of growth temperature, the furnace temperature setpoint was varied over the range of 450°C to 550°C at a reactor pressure of 100 Torr. The TMGa and TMSb flow rates were maintained at 1 sccm each (V/III = 1).…”

Section: Nanowire Growthmentioning

confidence: 99%

Growth and Characterization of Unintentionally Doped GaSb Nanowires

Burke

Weng

Kuo

et al. 2010

Journal of Elec Materi

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GaSb nanowires were synthesized on c-plane sapphire substrates by gold-mediated vapor-liquid-solid (VLS) growth using a metalorganic chemical vapor deposition process. A narrow process window for GaSb nanowire growth was identified. Chemical analysis revealed variations in the catalyst composition which were explained in terms of the Au-Ga-Sb ternary phase diagram and suggest that the VLS growth mechanism was responsible for the nanowire growth. The nominally undoped GaSb nanowires were determined to be p-type with resistivity on the order of 0.23 X cm. The photoluminescence was found to be highly dependent on the V/III ratio, with an optimal ratio of unity.

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“…6 There has been increasing interest in the GaSb nanowire growth, properties, and applications. [10][11][12][13][14][15] Among the III-V compound semiconductors, GaSb has the potential to be an encouraging candidate for high-speed electronic 7 and infrared photonic devices, 8 due to its high mobility and small band gap. 9 However, fabrication of nanodevices with enhanced performance still poses a key challenge for realizing new nanometer-scale electronics and devices, which, in turn depends on a better understanding of the electrical transport properties of nanomaterials.…”

Section: Introductionmentioning

confidence: 99%

Charge transport and trap characterization in individual GaSb nanowires

Chin

et al. 2012

Journal of Applied Physics

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Charge transport of unintentionally doped GaSb nanowires was studied through the fabrication and analysis of nanowire field effect transistors (FETs). In this work, both temperature dependent and voltage dependent measurements demonstrate various operating regimes, including a transition from linear current-voltage behavior at low bias to a space-charge limited current (SCLC) at large bias. Analysis of the voltage and temperature variation in the SCLC regime provided quantitative information about the trap energy distribution in the nanowires, which, after thermal annealing, has been shown to reduce from 0.26 eV to 0.12 eV. The measurements also indicate that the GaSb nanowire FETs exhibit n-type behavior, which is likely due to oxygen impurities in the nanowires.

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Effect of reactor pressure on catalyst composition and growth of GaSb nanowires

Cited by 21 publications

References 17 publications

Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells

Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells

Growth and Characterization of Unintentionally Doped GaSb Nanowires

Charge transport and trap characterization in individual GaSb nanowires

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