Growth and Characterization of Unintentionally Doped GaSb Nanowires

Burke, Robert A.; Weng, Xiaojun; Kuo, Ming; Song, Young Shin; Itsuno, Anne M.; Mayer, Theresa S.; Durbin, Steven M.; Reeves, Roger J.; Redwing, Joan M.

doi:10.1007/s11664-010-1140-5

Cited by 33 publications

(26 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This lowest DB density (i.e., the lowest surface energy) would typically make the NW grown in AE111ae directions as reported by others. 22,23,44 Similarly, all the DB density can be calculated for each plane and compiled in Table 1 (see details in Supporting Information Figures S2 and S3). It is noted that the AE110ae and AE211ae oriented NWs would all have polar surface planes with the Sb termination due to the high V/III ratio required D for the CVD growth.…”

Section: Resultsmentioning

confidence: 99%

Approaching the Hole Mobility Limit of GaSb Nanowires

Yang

Yip

et al. 2015

ACS Nano

View full text Add to dashboard Cite

In recent years, high-mobility GaSb nanowires have received tremendous attention for high-performance p-type transistors; however, due to the difficulty in achieving thin and uniform nanowires (NWs), there is limited report until now addressing their diameter-dependent properties and their hole mobility limit in this important one-dimensional material system, where all these are essential information for the deployment of GaSb NWs in various applications. Here, by employing the newly developed surfactant-assisted chemical vapor deposition, high-quality and uniform GaSb NWs with controllable diameters, spanning from 16 to 70 nm, are successfully prepared, enabling the direct assessment of their growth orientation and hole mobility as a function of diameter while elucidating the role of sulfur surfactant and the interplay between surface and interface energies of NWs on their electrical properties. The sulfur passivation is found to efficiently stabilize the high-energy NW sidewalls of (111) and (311) in order to yield the thin NWs (i.e., <40 nm in diameters) with the dominant growth orientations of ⟨211⟩ and ⟨110⟩, whereas the thick NWs (i.e., >40 nm in diameters) would grow along the most energy-favorable close-packed planes with the orientation of ⟨111⟩, supported by the approximate atomic models. Importantly, through the reliable control of sulfur passivation, growth orientation and surface roughness, GaSb NWs with the peak hole mobility of ∼400 cm(2)V s(-1) for the diameter of 48 nm, approaching the theoretical limit under the hole concentration of ∼2.2 × 10(18) cm(-3), can be achieved for the first time. All these indicate their promising potency for utilizations in different technological domains.

show abstract

Section: Resultsmentioning

confidence: 99%

Approaching the Hole Mobility Limit of GaSb Nanowires

Yang

Yip

et al. 2015

ACS Nano

View full text Add to dashboard Cite

show abstract

“…(1), estimated to be 3.4 9 10 -15 F. The calculated carrier mobility l e was *0.1 cm 2 /(V s). From the slope of the current-voltage (I-V) characteristics (V gate = 0 V), a resistivity of around 0.0471 Xm was calculated, which was *10 3 times lower than previous results reported in the literatures [15,16].…”

Section: Resultsmentioning

confidence: 56%

“…Single crystalline GaSb NWs used for device fabrication were grown via the chemical vapor deposition (CVD) method, which was much simpler and cheaper than previously reported methods, such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or metal organic vapor phase epitaxy (MOVPE) [15][16][17]. Single-NW field-effect transistors were first fabricated, which exhibited typical p-type transistor characteristic.…”

Section: Introductionmentioning

confidence: 99%

Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response

et al. 2015

View full text Add to dashboard Cite

“…GaSb is a III-V semiconductor, and has high hole mobility (850–10800 cm 2 /Vs), low carriers effective masses, and small direct band gap among the semiconductors10. Recently, p -type GaSb-based III-V semiconductors NWs have been a subject of intensive research owning to their excellent electronic properties.…”

mentioning

confidence: 99%

Remote p-type Doping in GaSb/InAs Core-shell Nanowires

Feng

Tang

Zhang

et al. 2015

Sci Rep

View full text Add to dashboard Cite

By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mobility of nanowire. For Zn doping in bare ZB [110] GaSb/InAs core-shell nanowire the hole states are compensated by surface states. We also studied the behaviors of remote p-type doing in two-dimensional (2D) GaSb/InAs heterogeneous slabs, and confirmed that the orientation of nanowire side facet is a key factor for achieving high efficient remote p-type doping.

show abstract

Growth and Characterization of Unintentionally Doped GaSb Nanowires

Cited by 33 publications

References 34 publications

Approaching the Hole Mobility Limit of GaSb Nanowires

Approaching the Hole Mobility Limit of GaSb Nanowires

Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response

Remote p-type Doping in GaSb/InAs Core-shell Nanowires

Contact Info

Product

Resources

About