Effect of Rising Edge during Dynamic Stress With Duty Ratio in Amorphous InGaZnO Thin Film Transistors

Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistor

“…Many research studies have focused on quantifying how TFTs are affected by factors such as positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS) under darkness or illumination. [3][4][5] Such studies were conducted after the fabrication or annealing of TFTs. However, real systems are exposed to the atmosphere for a long time, during which oxide TFTs can be degraded by ambient gases such as O 2 and H 2 O.…”