Effect of S/In concentration ratio on the physical properties of AgInS2-sprayed thin films

Structural Investigation of Photocatalyst Solid Ag1−xCuxInS2 Quaternary Alloys Sprayed Thin Films Optimized within the Lattice Compatibility Theory (LCT) Scope

“…It is noted that CuInS 2 material solidifies in chalcopyrite structures [4] whereas AgInS 2 can solidify in two forms: chalcopyrite and orthorhombic [5,6]. Moreover, the latest ternary compound could be obtained as n-type or p-type semiconductor using appropriate experimental chemical conditions [7][8][9][10][11][12][13][14].…”

“…Each ternary has been achieved in our laboratory using appropriate conditions [6][7][8]. On the other hand, the structures of these films were studied by means of X-ray diffraction apparatus (Panalytical X Pert PROMPD, = 1.54056Å) within the lattice compatibility theory.…”

“…The optical properties were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range 300-1800 nm using unpolarized light by means of a spectrophotometer (Shimadzu UV 3100S) [15]. M. This protocol is considered as an optimal condition for preparing such a p-type compound [6][7][8]. The carrier gas was nitrogen (pressure ≈ 0.35 bar) through a 0.5 mm diameter nozzle.…”

The Lattice Compatibility Theory: Arguments for Recorded I-III-O2 Ternary Oxide Ceramics Instability at Low Temperatures beside Ternary Telluride and Sulphide Ceramics

“…Binary sulphide compounds such as Ag 2 S, Cu 2 S, SnS 2 , and In 2 S 3 have been obtained in our laboratory in 200-320 ∘ C domain of temperature. Later, ternary sulphide compounds based on copper and silver which generally crystallized in chalcopyrite structure I-III-VI 2 (CuInS 2 , AgInS 2 AgInS 2− Se ) were prepared, by Guezmir et al [21], Kamoun et al [22,23], Aissa [24,25], and Lazzez et al [26], in substrate temperature lying in 340-420 ∘ C. Finally, Bouaziz et al [27,28] obtained Cu 2 SnS 3 and Cu 3 SnS 4 ternary compounds in 300-400 ∘ C domain.…”

Study of the I–V characteristics of SnO2:F/AgInS2 (p)/Al Schottky diodes

“…However, chemical deposition techniques have not been frequently used [10] to obtain this ternary compound which can crystallize in two forms: chalcopyrite and orthorhombic. Moreover, this compound could be obtained as n or p semiconductor type using appropriate experimental chemical conditions [11,12]. Recently, it is reported that AgInS 2 with p type conductivity has been obtained by introducing tin element Sn as dopant [13].…”