Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Sreemany, Monjoy; Sen, Shrabanee

doi:10.1016/j.apsusc.2006.05.040

Cited by 33 publications

(25 citation statements)

References 20 publications

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“…A regular shift of the Pt (111) peak towards higher angles (from 39.60° to 39.93°) is observed when the substrate temperature was increased from room temperature to 625 °C. A similar trend has been reported for 40 nm thick Pt thin films [27] and for 150 nm and 360 nm Pt thin films grown by DC sputtering on silicon substrate [15]. These films were deposited at room temperature and then annealed in argon at temperatures varying from 400 to 850 °C, and a shift of the (111) X-ray peak from 39.76° to 39.91° was obtained.…”

Section: Influence Of Deposition Temperature On Pt Crystallization Ansupporting

confidence: 79%

“…The slight increase in resistivity at low deposition temperature can be related to the smaller grain size and therefore to the presence of more grain boundaries in the thin films. The decrease in the resistivity of Pt film as the deposition temperature increases had already been observed [3,27,28]. Depending on the growth conditions, Sakaliuniene et al obtained resistivities of the order of 25 to 85 µΩ cm for Pt thin films deposited at low temperature on TiO 2 /Si, and of 25 to 65 µΩ cm after annealing [3].…”

Section: Influence Of Deposition Temperature On Pt Resistivitymentioning

confidence: 82%

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Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer

et al. 2020

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The decrease of the growth temperature of platinum (Pt) thin film on silicon substrate was studied using Ca 2 Nb 3 O 10 nanosheets (CNOns) as seed layer. These nanosheets were obtained by the delamination of the layered perovskite KCa 2 Nb 3 O 10 and they were deposited on silicon substrates by the Langmuir-Blodgett method. Pt thin films were sputtered on silicon coated by CNOns (CNOns/SiO 2 /Si), and on TiO 2 /SiO 2 /Si substrates for comparison, at temperatures ranging from room temperature up to 625 °C. X-ray diffraction, scanning electron microscopy, and atomic force microscopy were used to characterize the crystalline quality, thickness, surface morphology and roughness of the Pt thin films. Highly (111) textured Pt thin films were obtained on CNOns/SiO 2 /Si at substrate temperature as low as 200 °C. The full width at half maximum of the rocking curve of the (111) X-ray peak was about one degree, indicating a high crystalline orientation. The resistivity was measured at room temperature by the four point probes method to confirm the quality of Pt thin films elaborated at low temperatures. These results pave the way for easier integration of highly textured platinum thin film in low temperature microelectronic processes.

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Section: Influence Of Deposition Temperature On Pt Crystallization Ansupporting

confidence: 79%

Section: Influence Of Deposition Temperature On Pt Resistivitymentioning

confidence: 82%

Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer

et al. 2020

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“…The resistivity of both films decreased with increasing annealing temperature. This is related with the annihilation of the point defects and grain boundary [13]. The grain size of both films increased after annealing at high temperature, resulting in less grain boundary inside the films.…”

Section: Microstructure and Resistivity Of Pt-rh Filmsmentioning

confidence: 94%

Microstructure Evolution and Thermoelectric Property of Pt-PtRh Thin Film Thermocouples

et al. 2017

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Due to their small size, extremely fast response, and low cost, refractory metallic thin film thermocouples (TFTCs) are well suited for the surface temperature measurement of hot components. In this study, PtRh films with different amounts of Rhodium (10% and 13%) were deposited with direct current magnetron sputtering and annealed at different temperatures in air. The chemistry, microstructure, and resistivity of the films were investigated. Type S (Pt10%Rh-Pt) and type R (Pt13%Rh-Pt) TFTC were fabricated on alumina substrates. Rhodium segregation at the surface of PtRh film was observed, and the variation of the thermoelectric properties of TFTCs was discussed based on the chemistry and microstructure of PtRh films.

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“…This was supported by the following SEM-EDX measurement. 1 The signal of C element comes from the epoxy resin used for sample fixation. For the sp-Pt catalyst (Fig.…”

Section: Carbon Oxidation Reactionmentioning

confidence: 99%

“…The sputter deposition method was widely used to fabricate thin film such as Pt [1], Au [2], and Ni [3] films on substrate. Recently, sputter deposition method was explored as an approach to the preparation of heterogeneous catalysts.…”

Section: Introductionmentioning

confidence: 99%

Carbon Oxidation Reaction over Pt/Spherical Alumina Beads Catalysts Prepared by Sputtering Method

et al. 2010

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Effect of substrate temperature and annealing temperature on the structural, electrical and microstructural properties of thin Pt films by rf magnetron sputtering

Cited by 33 publications

References 20 publications

Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer

Highly textured Pt thin film grown at very low temperature using Ca2Nb3O10 nanosheets as seed layer

Microstructure Evolution and Thermoelectric Property of Pt-PtRh Thin Film Thermocouples

Carbon Oxidation Reaction over Pt/Spherical Alumina Beads Catalysts Prepared by Sputtering Method

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