Effect of substrate temperature on the growth and properties of boron-doped microcrystalline silicon films

Effect of Gas Dilution Ratios and Substrate Temperature on the Structural Transition of a-Si/μc-Si Thin-Film Solar Cell Using PECVD

“…The nucleation density increases when the conditions are shifted to the µ-Si:H growth. The reason for the appearance of isolated μc-Si:H grains on the surface of the samples with TS 250°C, is attributed to higher thickness of the deposited films [31,32] Fig. 5 shows the AFM images of specimens no.…”

“…It is recognized [27][28][29][30][31][32] that PECVD process parameters can be controlled to result structures with mixed phases of a-Si:H/μc-Si:H, through gas dilution and the same structure control could be achieved via annealing. In both cases, the previous work has shown that the resultant structures of the junction were controlled and accordingly its efficiency was affected.…”

The Research of Flexible Solar Cells for Application in Solar Roof

“…The i-layers of the cells were prepared to a thickness of 300 nm using hydrogen dilution of 10 and thus were amorphous throughout the thickness [4] . Highly conductive p-type µc-Si:H films with a conductivity of about 10-2 Scm-1 in the thickness of about 20 nm [5] were used as p-layers in the devices. Prior to p-type µc-Si:H deposition, an initial hydrogen plasma treatment of the underlying i-layer and nucleation layer deposition were performed.…”